Electric response as a function of applied voltage of Bi3.25La0.75Ti3O12 thin films grown by pulsed-laser deposition

Park, Jong-Ho; Kim, Jeongbae

doi:10.1016/j.mseb.2005.11.006

Materials Science and Engineering: B

2006

DOI: 10.1016/j.mseb.2005.11.006

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Electric response as a function of applied voltage of Bi3.25La0.75Ti3O12 thin films grown by pulsed-laser deposition

Jong-Ho Park

Jeongbae Kim

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2023

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Effect of grain size on ferroelectric and dielectric properties of Bi3.25La0.75Ti3O12 thin films prepared by rf-magnetron sputtering

Hao

et al. 2023

J. Adv. Dielect.

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Bi[Formula: see text]La[Formula: see text]Ti3O[Formula: see text](BLT) thin films are promising materials used in non-volatile memories. In this work, BLT films were deposited on Pt(111)/Ti/SiO2/Si substrates by rf-magnetron sputtering method followed by annealing treatments. The microstructures of BLT thin films were investigated via X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). With the increase in annealing temperature, the grain size increased significantly and the preferred crystalline orientation changed. A well-saturated hysteresis loop with a superior remnant polarization of 15.4 [Formula: see text] C/cm2 was obtained for BLT thin films annealed at 700[Formula: see text]C. The results show that the dielectric constant decreased with the increase in grain sizes.

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Effect of grain size on ferroelectric and dielectric properties of Bi3.25La0.75Ti3O12 thin films prepared by rf-magnetron sputtering

Hao

et al. 2023

J. Adv. Dielect.

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show abstract

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Electric response as a function of applied voltage of Bi3.25La0.75Ti3O12 thin films grown by pulsed-laser deposition

Cited by 1 publication

References 22 publications

Effect of grain size on ferroelectric and dielectric properties of Bi3.25La0.75Ti3O12 thin films prepared by rf-magnetron sputtering

Effect of grain size on ferroelectric and dielectric properties of Bi3.25La0.75Ti3O12 thin films prepared by rf-magnetron sputtering

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