Electric transport properties for three-dimensional angular-interconnects of Au wires crossing facet edges of atomically-flat Si{111} surfaces

Takemoto, Shohei; Hattori, Azusa N.; Hattori, Ken; Tanaka, Hidekazu; Daimon, Hiroshi

doi:10.7567/jjap.57.090303

Cited by 5 publications

(19 citation statements)

References 35 publications

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“…Ewald sphere in 3D RSM, for 3D crystal. 3D fabricated materials, the authors have demonstrated that not only substrate surfaces but also surfaces inclined from or perpendicular to a substrate plane exhibit atomically ordered structures where surface spots elongated along directions inclined from or perpendicular to the substrate normal direction appear in RHEED patterns ( Figure 5(b)) [6,7,9]. We emphasize that a simple surface property of 3D fabricated materials, that is, a surface direction, can be confirmed by the elongation of surface spots.…”

Section: Schematic Of Relationship Between Diffraction Spots and Recimentioning

confidence: 63%

“…The process parameters were an ICP source power of 300 W, a bias power of 10 W, and a working pressure of 4 Pa. Mixture gases of 10 sccm SF 6 , 5 sccm O 2 , and 200 sccm Ar were used in the etching cycle, and 40 sccm C 4 F 8 , 5 sccm O 2 , and 200 sccm Ar were used in the passivation process [6][7][8][9]. Depending on dry RIE conditions, various curved structures from trapezoid to triangle shapes were obtained.…”

Section: Sample Fabrication With Combination Of Dry and Wet Etching Pmentioning

confidence: 99%

“…Depending on dry RIE conditions, various curved structures from trapezoid to triangle shapes were obtained. When we produced tilted facet-surfaces (Figure 7(d) and (e)), the optimized conditions for a triangle-like shape were a flow rate of 51 sccm, a pressure of 4.0 Pa, and a bias power of 60 W using an RIE system (RIE-10 NR, Samco) with SF 6 gas [9].…”

Section: Sample Fabrication With Combination Of Dry and Wet Etching Pmentioning

confidence: 99%

“…Figure 10 shows the LEED patterns observed from the figured 111 ÀÁ side-surface. Because in LEED we observe backscattering diffraction, while RHEED reflects forward scattering diffraction, a unique 3D Si sample with a wider side-surface was prepared [9]. A clear 7Â7 pattern can be seen in Figure 10(a), where the incident electron beam is along a direction almost normal to the 111 ÀÁ side-surface.…”

Section: Rheed Observation Of 3d Structured Samplesmentioning

confidence: 99%

“…Low-energy electron diffraction (LEED) is also a conventional and nondestructive surface observation technique [5]. To apply these techniques to 3D structured samples with various oriented surfaces, instead of 2D planar samples, an appropriate alignment of the incident electron beam considering the configuration in 3D space is indispensable [6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

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Creation and Evaluation of Atomically Ordered Side- and Facet-Surface Structures of Three-Dimensional Silicon Nano-Architectures

Hattori¹,

Hattori²

2020

21st Century Surface Science - A Handbook

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The realization of three-dimensional (3D)-architected nanostructures, that is, the transformation from novel two-dimensional (2D) film-based devices to 3D complex nanodevices, is of crucial importance with the progress of scaling down devices to nanometer order. However, little attention has been devoted to controlling the atomic ordering and structures of side-surfaces on 3D structures, while techniques for controlling and investigating 2D surfaces, namely, surface science, have been established only for planar 2D surfaces. We have established an original methodology that enables atomic orderings and arrangements of surfaces with arbitrary directions to be observed on 3D figured structures by developing diffraction and microscopy techniques. An original technique, namely, directly and quantitatively viewing the side- and facet-surfaces at the atomic scale by reflection high-energy electron diffraction (RHEED) and low-energy electron diffraction (LEED), can be used to determine process parameters in etching. This chapter introduces methods of evaluation by RHEED and LEED based on a reciprocal space map and methods of creating various atomically flat 111 and {100} side-surfaces of 3D Si nano-architectures and tilted 111 facet-surfaces fabricated by lithography dry and wet etching processes, followed by annealing treatment in vacuum.

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Section: Schematic Of Relationship Between Diffraction Spots and Recimentioning

confidence: 63%

Section: Sample Fabrication With Combination Of Dry and Wet Etching Pmentioning

confidence: 99%

Section: Sample Fabrication With Combination Of Dry and Wet Etching Pmentioning

confidence: 99%

Section: Rheed Observation Of 3d Structured Samplesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Creation and Evaluation of Atomically Ordered Side- and Facet-Surface Structures of Three-Dimensional Silicon Nano-Architectures

Hattori¹,

Hattori²

2020

21st Century Surface Science - A Handbook

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Atomically Architected Silicon Pyramid Single-Crystalline Structure Supporting Epitaxial Material Growth and Characteristic Magnetism

Irmikimov

Pamasi

Hattori

et al. 2021

Crystal Growth & Design

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The control of three-dimensional (3D) geometrical shapes is one of important approaches that contribute the development of new functionalities in material science. We produced 3D Si pyramids with atomically flat and reconstructed {111} facet surfaces supporting atomically resolved material growth in 3D space for the first time. The complex 4-fold clean 7×7 and 2×2-Fe low-energy electron diffraction (LEED) patterns reflecting the pyramidal geometry showed the realization of atomically reconstructed facet surfaces on the 3D patterned Si. Cross-sectional transmission electron microscopy (TEM) revealed the epitaxial heterointerfaces between Fe nanofilm and Si facet surfaces. The LEED and TEM results indicate the applicability of the Si pyramid as a supporting substrate for arbitrarily oriented 3D functional structures. The pyramidal Fe nanofilm displayed magnetic properties depending on the geometric shape, owing to the facet surfaces and the sharp facet edges. The unique anisotropic magnetization behavior of the 3D pyramid shape indicates that the epitaxial growth of an arbitrary geometry by virtue of the atomically ordered substrate surfaces in 3D space can contribute to the modification of the functionality.

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Accessibility of ARPES for Three-dimensionally Architected Si{111}7×7 Facet Surfaces on Micro-patterned Si(110)

Hattori

Sakai

Pamasi

et al. 2022

e-J. Surf. Sci. Nanotechnol.

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The creation of three-dimensional (3D) geometrical shapes with atomically ordered surfaces and the investigation of their physical properties are major steps contributing to the development of a new paradigm in surface science. We produced a 3Dpatterned Si sample with atomically flat and reconstructed {111} facet surfaces, and investigated its structural and physical properties. To apply the conventional techniques in surface science to 3D samples with various oriented surfaces, instead of two-dimensional planar samples, an appropriate relationship between the crystallographic surface ordering on the 3D-architected surfaces and the angle-resolved photoelectron spectroscopy (ARPES) setup considering the configuration in 3D space is indispensable. The distinctive and complex low-energy electron diffraction (LEED) patterns reflecting the 3D-arranged facet surfaces showed the realization of atomically reconstructed facet surfaces on 3D-patterned Si. Surface states of the 3D-patterned Si{111} surfaces are mapped by ARPES by considering the 3D geometrical relationship. The selection of the appropriate alignment of the incident electron beam (light) for the target surfaces allows the clear observation of the band dispersion from the produced {111}7×7 facet surfaces in 3D space. Our demonstration of accessibility of ARPES technique could provide useful guidelines for new methodologies, giving a fundamental understanding of 3D-shape-induced novel functionalities.

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Electric transport properties for three-dimensional angular-interconnects of Au wires crossing facet edges of atomically-flat Si{111} surfaces

Cited by 5 publications

References 35 publications

Creation and Evaluation of Atomically Ordered Side- and Facet-Surface Structures of Three-Dimensional Silicon Nano-Architectures

Creation and Evaluation of Atomically Ordered Side- and Facet-Surface Structures of Three-Dimensional Silicon Nano-Architectures

Atomically Architected Silicon Pyramid Single-Crystalline Structure Supporting Epitaxial Material Growth and Characteristic Magnetism

Accessibility of ARPES for Three-dimensionally Architected Si{111}7×7 Facet Surfaces on Micro-patterned Si(110)

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