Electric Tuning of Magnetic Anisotropy and Exchange Bias of La0.8Sr0.2CoO3/La0.67

Electric-Field Reversible Switching of the Exchange Spring and Exchange Bias Effect in SrCoO3–x/La0.7Sr0.3MnO3 Heterostructures

“…When positive (negative) voltage is applied between the sample and ILG, the DEME + cations (TFSI – anions) from ILG move to the side of the bilayer and then attract more electrons (holes), bringing about the formation of the electric double layer at the interface. ,,, Consequently, the positive (negative) voltages favor the accumulation (depletion) of oxygen vacancies in films. Because the SCO 3– x films have lower formation energy for oxygen vacancies compared with LSMO films, we could apply appropriate electric voltage to tune only the top SCO 3– x layer without having any noticeable effect on the bottom LSMO layer. ,,, Figure b shows the in-plane minor loop of initial and gated P-SCO (10 u.c. )/LSMO bilayers, measured at 5 K after the positive 5 T cooling field.…”

“…Because the SCO 3−x films have lower formation energy for oxygen vacancies compared with LSMO films, we could apply appropriate electric voltage to tune only the top SCO 3−x layer without having any noticeable effect on the bottom LSMO layer. 6,9,19,35 Figure 3b shows the in-plane minor loop of initial and gated P-SCO (10 u.c. )/LSMO bilayers, measured at 5 K after the positive 5 T cooling field.…”

“…It was used to detect the orbital occupation of special elements in TEY mode at room temperature. XLD is obtained from different intensities between the incident angle of X-ray with 90° ( E //a) and 30° ( E //c), defined as I a and I c , respectively. ,,, The positive sign of XLD (the area under the L 2 peak, A XLD ) indicates that the electrons prefer to fill the out-of-plane d 3 z 2 – r 2 orbital, while the negative A XLD demonstrates the preferential occupation of the in-plane d x 2 – y 2 orbital. Figure c,d shows the Mn XLD results of two kinds of bilayers.…”

“…6−8 It can reduce the switching energy further by using an electric field to accomplish the nonvolatile magnetic reversal. 9 For instance, electric-field-controlled ionic liquid gating (ILG) has emerged as an effective method to control both magnetic and electric phase transition in the various oxide materials, not only through the well-established electrostatic charge modulation but also by inducing phase transformation via ion transfer through its intrinsic electrochemical effects. 10 In contrast to the pure electric field effect, the electric double layer formed at the interface between the ionic liquid and samples generates exceptionally high carrier densities around 10 14 to 10 15 cm −2 , which promotes a significant phase transition in the entire volume of various single-oxide layers like VO 2 , WO 3 , NdNiO 3 , SrFeO 3 , and so forth.…”

“…The electrical control of magnetic switching in strongly correlated oxides has manifested immense application prospects in information storage and spintronic devices owing to low power consumption and high tunability. − Although pioneers have achieved current-induced magnetic switching using spin-transfer torques and spin–orbit torques, , the voltage manipulation of magnetic properties is also fascinating. − It can reduce the switching energy further by using an electric field to accomplish the nonvolatile magnetic reversal . For instance, electric-field-controlled ionic liquid gating (ILG) has emerged as an effective method to control both magnetic and electric phase transition in the various oxide materials, not only through the well-established electrostatic charge modulation but also by inducing phase transformation via ion transfer through its intrinsic electrochemical effects .…”