Electrical activation of boron-implanted silicon during rapid thermal annealing

Landi, Elena; Armigliato, A.; Solmi, S.; Kögler, R.; Wieser, E.

doi:10.1007/bf00615499

Cited by 40 publications

(34 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Only defects beyond the amorphous/crystalline interface remain from the PAI. However, the activation achieved after SPE regrowth can only reach concentrations in the order of a few times 10 20 cm −3 [1,5,6]. Laser annealing makes electrical activation up to levels ∼10 21 cm −3 possible [7].…”

Section: Introductionmentioning

confidence: 98%

“…Laser annealing makes electrical activation up to levels ∼10 21 cm −3 possible [7]. However, in the presence of high B concentrations, subsequent thermal treatments results in additional boron deactivation within the regrown layer [1,[5][6][7].…”

Section: Introductionmentioning

confidence: 98%

“…It has been observed experimentally that preamorphizing implants (PAI) enhances dopant activation during low-temperature SPE regrowth of the amorphous layer, with a minimal amount of dopant diffusion [1,2]. It is generally assumed that B is incorporated into substitutional positions and becomes electrically active, and defects within the amorphous layer are swept towards the surface during the regrowth [3,4].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles

Aboy¹,

Pelaz²,

Marqués³

et al. 2004

Materials Science and Engineering: B

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles

Aboy¹,

Pelaz²,

Marqués³

et al. 2004

Materials Science and Engineering: B

View full text Add to dashboard Cite

“…These implant conditions have to be properly modeled since ions such as Ge or As are frequently used in the manufacturing of Si devices as preamorphizing steps [49,50], and molecular implants with octadecaborane are considered as an alternative to monatomic B implants because they are self-amorphizing and minimize residual damage [51].…”

Section: Towards a Comprehensive Description Of Ion-implanted Damagementioning

confidence: 99%

“…This energy is approximately 38% lower than the bulk value, which results in the enhancement of damage generation near the surface. [49,83]. In addition, recrystallization takes place at relatively low temperatures [84], and the regrown layer has a low defect density because during SPER of a continuous a-layer excess Si self-interstitials are swept to the surface or buried interface, where they are annihilated [85].…”

Section: Towards a Comprehensive Description Of Ion-implanted Damagementioning

confidence: 99%

Improved physical models for advanced silicon device processing

Pelaz

Marqués

Aboy

et al. 2017

Materials Science in Semiconductor Processing

View full text Add to dashboard Cite

We review atomistic modeling approaches for issues related to ion implantation and annealing in advanced device processing. We describe how models have been upgraded to capture physical mechanisms in more detail as a response to the accuracy demanded in modern process and device modeling. Implantation and damage models based on the binary collision approximation have been improved to describe the direct formation of amorphous pockets for heavy or molecular ions. The use of amorphizing implants followed by solid phase epitaxial regrowth has motivated the development of detailed models that account for amorphization and recrystallization, considering the influence of crystal orientation and stress conditions. We apply simulations to describe the role of implant parameters to minimize residual damage, and we address doping issues that arise in non-planar structures such as FinFETs.

show abstract

Shallow junctions for ULSI technology

Solmi¹,

Angelucci²,

Merli³

1990

Trans Emerging Tel Tech

View full text Add to dashboard Cite

Abstract. Post‐implantation annealing conditions suitable to obtain very shallow p + ‐n and n + ‐p junctions with good electrical characteristics are critically examined by considering transient enhanced diffusion phenomena, dopant electrical activation, regrowth of the amorphous layer and radiation damage removal. Since activation energy of the diffusion processes is lower than that of damage recovery, high temperature rapid thermal annealings results, in principle, the best technique to fabricate shallow junction. The characteristics of diodes with junction depth of about 0.1 μm obtained by low energy implantation and annealing at 1000°C for 10 s are reported and discussed. Finally, ion implantation of B and As through a film of molybdenum or molybdenum silicide has been considered as a promising approach to shallow junction formations. Preliminary results related to devices fabricated by means of this self‐aligned procedure are presented.

show abstract

Electrical activation of boron-implanted silicon during rapid thermal annealing

Cited by 40 publications

References 14 publications

The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles

The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles

Improved physical models for advanced silicon device processing

Shallow junctions for ULSI technology

Contact Info

Product

Resources

About