Electrical activity of Yb in InP

Lambert, B.; Toudic, Y.; Grandpierre, G.; Rupert, A.; Corre, Alain Le

doi:10.1049/el:19880988

Cited by 24 publications

(10 citation statements)

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“…In contrast to the results reported by Lambert et al, 7,8 the ESR intensity of Yb 3ϩ (4 f 13 ) for n-type samples was found to be much lower than that for p-type samples, indicating that an electron captured by the AE trap is accommodated in the Yb 4 f shell and the Yb ion is in the Yb 2ϩ (4 f 14 ) state.…”

Section: Introductioncontrasting

confidence: 96%

“…This model was based on the fact that Lambert et al 7,8 observed an ESR signal of Yb 3ϩ (4 f 13 ) even in Yb-doped n-type InP, which has a higher concentration of carrier than of Yb. However, the samples used in their study were melt-grown crystals with n-type impurities incorporated from a silica crucible.…”

Section: Resultsmentioning

confidence: 99%

“…Lambert et al 7,8 observed an ESR spectrum from unintentionally Si doped n-type bulk InP and concluded that Yb ions are in the Yb 3ϩ (4 f 13 ) state rather than the Yb 2ϩ (4 f 14 ) state even in n-type InP. On the basis of their results, it has been recognized that the electron captured by the AE trap is located outside the 4 f shell and that Yb ions are in the Yb 3ϩ (4 f 13 ) state.…”

Section: Introductionmentioning

confidence: 99%

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4f -shell configuration of Yb in InP studied by electron spin resonance

Ishiyama

Murakami

Takahei

et al. 1997

Journal of Applied Physics

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We have performed electron spin resonance ͑ESR͒ measurements on Yb-doped n-type and p-type InP layers epitaxially grown by metalorganic chemical vapor deposition. ESR spectra of Yb 3ϩ (4 f 13 ) were observed in both n-type and p-type samples. However, the ESR intensity of Yb 3ϩ (4 f 13 ) for n-type samples was found to be much lower than that for p-type samples. This suggests that most Yb ions in Yb-doped n-type InP are in the Yb 2ϩ (4 f 14 ) state rather than in the Yb 3ϩ (4 f 13 ) state. Thus an electron captured by the trap level formed by Yb in the band gap of InP is not located outside the Yb 4 f shell as reported previously, but accommodated in the Yb 4 f shell.

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Section: Introductioncontrasting

confidence: 96%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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4f -shell configuration of Yb in InP studied by electron spin resonance

Ishiyama

Murakami

Takahei

et al. 1997

Journal of Applied Physics

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“…Knowledge of the microscopic structures of the rare earth impurities in semiconductor hosts is very important for fabricating efficient injection-type light emitting devices. To understand the microscopic structures, the electron spin resonance ͑ESR͒ measurements, [1][2][3][4][5][6][7] the extended x-ray absorption fine structure ͑EXAFS͒ measurements, 8,9 and the Rutherford backscattering ͑RBS͒ channeling measurements [10][11][12][13] have been performed on Er-doped GaAs, Er-doped Si, and Yb-doped InP.…”

Section: Introductionmentioning

confidence: 99%

Electron spin resonance of Er–oxygen complexes in GaAs grown by metal organic chemical vapor deposition

Ishiyama

Katayama

Murakami

et al. 1998

Journal of Applied Physics

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We have performed electron spin resonance ͑ESR͒ measurements on Er-doped GaAs grown with oxygen codoping by metal organic chemical vapor deposition. An isotropic line ͑an effective g value, gϭ5.95) which had been already reported was observed in samples without oxygen codoping. On the other hand, for samples with oxygen codoping other strong anisotropic ESR lines originated from four kinds of Er 3ϩ (4 f 11 ) centers ͑A, B, C, and D͒ were newly observed in addition to the weaker isotropic line. The anisotropic g tensors obtained by analyzing the angular dependence of the ESR lines indicate that B and C centers are of orthorhombic C 2v symmetry, A center has lower symmetry than orthorhombic symmetry, and D center is of trigonal C 3i symmetry. The ESR intensities of A, B, and C centers were approximately two orders of magnitude higher than that of the isotropic line with gϭ5.95. The ESR intensity of D center was one order of magnitude lower than those of A, B, and C. The Er concentration dependence of the relative ESR intensities of these centers was investigated, which indicates ͑i͒ the ESR intensities of A and D increase with increasing Er concentration, and ͑ii͒ those of B and C are saturated above the Er concentration ͓Er͔ у10 18 cm Ϫ3 . The ESR measurement under light illumination, as well as the Er concentration dependence, suggests that the B center with C 2v symmetry corresponds to the dominant Er luminescent center under host photoexcitation.

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“…Binding of electrons at Yb AE-traps has been well documented using optically detected cyclotron'resonance [20][21][22]. Electron paramagnetic resonance experiments revealed a strong Yb3+ signal in both n-and p-type InP [23], indicating that the 30 meV AE-trap cannot be due to the Yb 3 +/Yb 2 + acceptor level. It provides evidence that the bound electron is located outside the atom core and can be considered as effective-mass-like.…”

Section: Inpas: Yb Alloysmentioning

confidence: 99%

Rare Earth Centres in Mixed Compound Crystals

Kozanecki

1996

Acta Phys. Pol. A

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A review of the Yb impurity related centres in mixed InP-based crystals has been presented. It is shown that Yb3+ ions can be utilized to probe alloy disorder, both in cationic (GaInP) and anionic (InΡΑs) alloys. The existence of alloy disorder manifested itself in the photoluminescence spectra reffecting local atomic structure of the Yb centres. The dominant emissions have been ascribed to the Yb-Ρ4 Ga1 2 and Yb-P4-Ga11In complexes in GaInP and to Yb-P4 and Yb-P 3 As centres in InPAs. The excitation and relaxation mechanisms of the 4 f -shell of Yb3+ ions were also investigated. It was found that the temperature quenching of the Yb 3 + luminescence was accompanied with the appearance of two thermally activated photoluminescence bands. It is suggested that photoluminescence at an energy of 25 meV below the energy gap is due to recombination of excitons bound at Yb-related centres. Relaxation of the excited 4 f-shell of Yb3+ ions proceeds via back transfer of the excitation energy from the 4f-shell to excitons bound at Yb-centres.

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Electrical activity of Yb in InP

Cited by 24 publications

References 0 publications

4f -shell configuration of Yb in InP studied by electron spin resonance

4f -shell configuration of Yb in InP studied by electron spin resonance

Electron spin resonance of Er–oxygen complexes in GaAs grown by metal organic chemical vapor deposition

Rare Earth Centres in Mixed Compound Crystals

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