Electrical and adhesion properties of plasma-polymerised ultra-low k dielectric films with high thermal stability

Investigation of interconnect design on interfacial cracking energy of Al/TiN barriers under a flexural load

“…These issues have given rise to an urgent need to enhance interfacial adhesive strength, a stringent standard for guaranteeing interconnect reliability. Several approaches are used to examine the interfacial adhesive strength of stacked films; these methods include nano-indentation [2], blister tests [3], the modified decohesion test [4], and the nanoscratch test [5,6]. Among these techniques, the four-point bending test (4-PBT) is emerging as the preferred technique for studying the adhesion of interconnects in semiconductor devices [7][8][9][10][11][12].…”

Preparation and Characterization of Amorphous Fluorinated Carbon Film Using Low-Global-Warming-Potential Gas, C4F6, by Plasma-Enhanced Chemical Vapor Deposition

“…7,8) On the other hand, amorphous fluorinated carbon (a-C:F) films, such as IMDs, which are prepared from several perfluorocarbon (PFC) gases, can be used as low-k materials without pores. [9][10][11][12][13][14][15][16][17][18][19][20][21] As these reports show, a-C:F film deposited by plasma-enhanced CVD (PECVD) generally has a dielectric constant of 2.0 -2.5, which may make it a promising candidate for next generation IMDs.…”

Adhesion study of tetra methyl cyclo tetra siloxanes (TMCTS) and tri methyl silane (3MS)-based low-k films

“…Enhanced adhesion and integrity of the constituent interfaces are closely related to composition and processing conditions [2,4]. Methodologies used to test the adhesion of thin films include the peel test [15], tape test [15,16], nano-scratch test (NST) [16][17][18][19][20][21], stud-pull test [15], indentation test [16], modified edge liftoff test [22], and the 4-point bending test [2][3][4][5]15,[23][24][25][26][27][28][29]. The 4-point bending has been widely used to test interfacial adhesion energy of low-k materials [2][3][4][5]15,[23][24][25][26][27][28][29].…”