Electrical and dielectric behaviors of Al/SiO₂-surfactant/n-Si schottky structure in wide range of voltage and frequency

Abstract

SiO2 surfactant insulator into Al/n-Si metal-semiconductor (MS) structure was fabricated into Al/SiO2-surfactant/n-Si metal-insulator-semiconductor (MIS) structure and its effect on the electrical properties of the final structure was investigated. The SiO2-surfactant layer is coated on the n-Si wafer by the spin coating technique. The I-V data is used to calculate the fundamental electrical parameters of this MIS structure. The density distribution of the surface states (Nss) is computed depending on the energy at forward potential. The current conduction mechanisms (CCMs) in the MIS structure are examined at the reverse and forward biases applied. To get more accurate and reliable results, the profiles of I-V and C/(G/ω)-V are measured at a wide range of bias voltage (0.25V-4V) and frequency (1kHz-1MHz), respectively. The performance of the MIS is significant due to the basic values of electrical parameters (n, I0, Rs, Rsh, Nss, ΦB0, and Rectifying Ration (RR)) and dielectric parameters (ε′, ε'', tanδ, M′, M'', Rs, and σ) compared with the MS structure. The other electrical parameters (ND, WD, Em, are extracted from the slope and intercept of the reverse bias C-2-V plot as a function of frequency. Furthermore, the profile of voltage-dependent Rs and Nss was determined using different methods from I-V and C/G-V data and examined comparatively with each other. The changes in impedance properties with frequency and voltage of the MIS are discussed in detail.