Electrical and dielectric characterization of Ge quantum dots embedded in MIS structure (AuPd/SiO2:Ge QDs/n-Si) grown by MBE

Alenizi, Maha A.; Aouassa, Mansour; Bouabdellaoui, Mohammed; Saron, K.M.A.; Aladim, A.K.; Ibrahim, Mohammed; Berbezier, Isabelle

doi:10.1016/j.physb.2024.415962

Physica B: Condensed Matter

2024

DOI: 10.1016/j.physb.2024.415962

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Electrical and dielectric characterization of Ge quantum dots embedded in MIS structure (AuPd/SiO2:Ge QDs/n-Si) grown by MBE

Maha A. Alenizi,

Mansour Aouassa,

Mohammed Bouabdellaoui

et al.

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Cited by 4 publications

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Electrical and dielectric characterization of Ge quantum dots embedded in MIS structure (AuPd/SiO2:Ge QDs/n-Si) grown by MBE

Cited by 4 publications

References 65 publications

Transport and electrical properties of Si and Ge quantum dots embedded in oxide layers of MOS structures for optoelectronic applications

Transport and electrical properties of Si and Ge quantum dots embedded in oxide layers of MOS structures for optoelectronic applications

MBE growth and ordering of ferromagnetic MnGe nanocrystals on a nanopatterned insulating layer

High photosensitivity in amorphous silicon-capped silicon nanocrystals embedded in metal-insulator-semiconductor structures (Al/@Si/Si NCs/SiO₂/n-Si) for photodetection and energy harvesting

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