Electrical and dielectric parameters in TiO2-NW/Ge-NW heterostructure MOS device synthesized by glancing angle deposition technique

Abstract

This paper reports the catalyst-free coaxial TiO2/Ge-nanowire (NW) heterostructure synthesis using the glancing angle deposition (GLAD) technique integrated into an electron beam evaporator. The frequency and voltage dependence of the capacitance–voltage (C–V) and conductance–voltage (G/ω–V) characteristics of an Ag/TiO2-NW/Ge-NW/Si device over a wide range of frequency (10 kHz–5 MHz) and voltage (− 5 V to + 5 V) at room temperature were investigated. The study established strong dependence on the applied frequency and voltage bias. Both C–V and G/ω–V values showed wide dispersion in depletion region due to interface defect states (Dit) and series resistance (Rs). The C and G/ω value decreases with an increase in applied frequency. The voltage and frequency-dependent Dit and Rs were calculated from the Hill-Coleman and Nicollian–Brews methods, respectively. It is observed that the overall Dit and Rs for the device decrease with an increase in the frequency at different voltages. The dielectric properties such as dielectric constant ($$\upepsilon$$ ϵ ′), loss ($$\upepsilon$$ ϵ ″) and loss tangent (tan δ) were determined from the C–V and G/ω–V measurements. It is observed that $$\upepsilon$$ ϵ ′, $$\upepsilon$$ ϵ ″ decreases with the increase in frequency. Therefore, the proposed MOS structure provides a promising alternative approach to enhance the device capability in the opto-electronics industry.

FREQUENCY RESPONSE ON THE ELECTRICAL CHARACTERISTICS OF SiNWS BASED MOS CAPACITOR WITH HIGH-K MATERIAL

“…measurements are dependent on the different parameters which include; the formation of interfacial layer, series resistance and trap charges [9], [16]. As stated before, the interfere states can easily be eliminated, when the C-V and Gm/-V measurements have been performed at high frequency the contribution of capacitance value in the accumulation region is zero [16]. There are a variety of methods that have been formulated for the calculation of Rs.…”

“…As stated before in Fig. (3a) the interface states can easily follow the ac signal at low frequency while at high frequency these charges cannot follow the ac signal due to their large life time [1], [2], [16]. The C-V and Gm/𝜔-V measurements were corrected by using the Rs values from the strong accumulation.…”

“…However, the conductance value in the accumulation region reducing. The (Gm/𝜔-V) measurements are dependent on the different parameters which include; the formation of interfacial layer, series resistance and trap charges[9],[16]. As stated before, the interfere states can easily be eliminated, when the C-V and Gm/-V measurements have been performed at high frequency the contribution of capacitance value in the accumulation region is zero[16].…”