Electrical and electronic properties of nitrogen doped amorphous carbon (a-CNx) thin films

Abstract

a b s t r a c tNitrogen-doped amorphous carbon thin films (a-CN x ) were prepared on silicon substrate by pulsed laser deposition process using methane (CH 4 ) and nitrogen (N 2 ) as source gas. The electrical properties of a-CN x films changes with nitrogen concentration in the film structure. The intensity ratio of the D and G peak (I D /I G ) increases with higher nitrogen concentration, which means that sp 2 -clusters were formed in these films and is responsible for the enhancement of conductivity of the a-CN x films. We observed that the amorphous carbon (a-C) films becoming more graphitic in nature yielding higher conductivity/lower resistivity with increase of nitrogen concentration. Electron field emission result shows that the emission current density enhances with nitrogen doping that indicates the useful in electron field emission devices application.

Nitrogen and Oxygen Functionalization of Multi‐Walled Carbon Nanotubes for Tuning the Bifunctional Oxygen Reduction/Oxygen Evolution Performance of Supported FeCo Oxide Nanoparticles

“…While the ORR overpotentials observed in the linear sweep voltammograms as shown in Figure 11a varied in relation to ammonia concentration, the peroxide yield observed in this same kinetic region was rather similar. It can be speculated that the observed decrease of ORR overpotentials, as well as OER overpotentials, correlates to the increasing nitrogen content due to an increase in the electrical conductivity, which has been reported previously for mildly N‐doped carbons, including carbon nanofibers, [36] reduced graphene oxide, [37] and amorphous carbon thin films [38] . In the case of the ORR, the larger nitrogen content in FeCoOx/N(6 %)‐MWCNT‐Ox translated into a larger amount of catalytic sites (N−C bonds) competing for a less selective ORR, leading to a slight increase in overpotential despite the increase in electrical conductivity.…”

Highly Reliable Contacts to Silicon Enabled by Low Temperature Sputtered Graphenic Carbon

“…Furthermore, we investigated the nitrogen-doped carbon films, as nitrogen (N) can reduce the resistivity of the carbon film and values < 10 −2 cm are reported [35]. The N-doping leads to a shift of the Fermi level towards the conduction band, that's why nitrogen acts as electron donor and is considered as n-type doping [36], [37]. We prepared the CN films with the same process setup as for SC, only the nitrogen gas (N 2 ) was added to the argon gas (Ar).…”

Interfacial structure and electrochemical sensing properties of nitrogen-doped diamond-like carbon film electrodes modified with platinum nanoparticles and 4-aminobenzoic acid

“…Similarly, the higher the I D /I G ratio is, the more the lattice defects exist. 42 Fig. 5 shows that the impedance diagrams of the bare and modied N:DLC lms.…”