Electrical and gas sensing properties of por-Si/SnO x nanocomposite layers

Болотов, В. В.; Roslikov, V. E.; Kurdyukova, E. A.; Krivozubov, O. V.; Sten’kin, Yu. A.; Cheredov, D. V.

doi:10.1134/s1063782612010058

Cited by 5 publications

(4 citation statements)

References 15 publications

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“…Since ν 0 = 10 13 s -1 is the thermal vibration frequency of an atom and k is the Boltzmann constant, the frequency of such transitions (or diffusion rate ν) is determined by the Arrhenius law (1) Several approaches exist to determine binding energy E; here, we calculate E similarly to the method used in [12,20]. For a particle having n neighbors in the first coordination shell and m neighbors in the sec ond one, we can write…”

Section: Monte Carlo Simulationmentioning

confidence: 99%

“…In this field of semiconductor technology, por Si based transducers of chemical substances and humidity, photoconvert ers, and photonic crystals were developed [1]. Another trend is the creation of microelectromechanical sys tems based on por Si and carbon nanotubes.…”

Section: Introductionmentioning

confidence: 99%

“…Macroporous silicon, or microchannel silicon, is a unique material [2]. The range of its practical applica tions is rather wide: photonic crystals [1], microcapil laries [2], the deposition of magnetic microparticles, and electrodes for lithium cells. At present, porous sil icon is also considered as a material for creating dislo cation free heteroepitaxial silicon carbide layers, which is a unique commercial material for semicon ductor transducers [3,4].…”

Section: Introductionmentioning

confidence: 99%

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Thermodynamics of silicon carbide nucleation during the carbonization of nanoporous silicon

Nagornov

2015

Tech. Phys.

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A nucleation theory is proposed to describe the dynamics of formation of 3C-SiC nanocrystals during the carbonization of nanoporous silicon. A Monte Carlo simulation shows that spherical 3C-SiC nanocrystals form in quantum silicon wires in the first seconds, which coincides with the initial time of fusion of the pore walls. The energy barrier to silicon carbide nucleation is thermodynamically calculated, and the barrier is shown to be overcome due to a change in the pore wall area and, correspondingly, surface energy release. The proposed theory can be used to describe the necessary conditions of formation of 3C-SiC nanocrystals and explains why they do not form in single crystal silicon.

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Section: Monte Carlo Simulationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Thermodynamics of silicon carbide nucleation during the carbonization of nanoporous silicon

Nagornov

2015

Tech. Phys.

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“…The order, in which the obtained dependences are arranged in Fig. 6, corresponds to the values of dielectric permittivity in those substances ( Table 2), which testifies that the dielectric permittivity of the adsorbate film affects the structure response to a gas environment [31].…”

Section: Influence Of a Gas Environmentmentioning

confidence: 66%

Optical and Electrophysical Properties of 95% In2O3 + 5% SnO2/ns-Si Heterostructure

et al. 2016

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OPTICAL AND ELECTROPHYSICAL PROPERTIES OF 95% In 2 O 3 + 5% SnO 2 /ns-Si HETEROSTRUCTURE PACS 68.37 Hk, Optical and electrical properties of 95% In2O3 + 5% SnO2/ns-Si heterostructures with films 6 and 12 nm in thickness deposited on a nanostructured silicon surface by the magnetron sputtering have been considered. It is shown that the 6-nm film is characterized by several peaks in the optical absorption spectrum, while the 12-nm film has no absorption peaks in the same spectral interval. The influence of the environment and the optical irradiation on the electrical properties of 95% In2O3 + 5% SnO2/ns-Si structures is determined. Their response to the gas environment is shown to be governed by the dielectric permittivity of an adsorbate. The results obtained can be used in the development of resistive gas sensors based on 95% In2O3 + 5% SnO2/ns-Si films.K e y w o r d s: current-voltage characteristics, absorption spectrum, thin films, transparent oxides.

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P–P heterojunction sensor of self-assembled polyaniline nano-thin film/microstructure silicon array for NH3 detection

Tai

et al. 2015

Chemical Physics Letters

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Electrical and gas sensing properties of por-Si/SnO x nanocomposite layers

Cited by 5 publications

References 15 publications

Thermodynamics of silicon carbide nucleation during the carbonization of nanoporous silicon

Thermodynamics of silicon carbide nucleation during the carbonization of nanoporous silicon

Optical and Electrophysical Properties of 95% In2O3 + 5% SnO2/ns-Si Heterostructure

P–P heterojunction sensor of self-assembled polyaniline nano-thin film/microstructure silicon array for NH3 detection

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