2022
DOI: 10.3390/coatings12030383
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Electrical and Hysteresis Characteristics of Top-Gate InGaZnO Thin-Film Transistors with Oxygen Plasma Treatment Prior to TEOS Oxide Gate Dielectrics

Abstract: We report the impact of oxygen (O2) plasma time on an amorphous indium–gallium–zinc oxide (a-IGZO) thin-film surface that was carried out before TEOS deposition in order to optimize the performance of thin-film transistors (TFTs). TheO2 plasma time of 60 s possessed the largest on/off current ratio of >108, with a field-effect mobility (µFE) of 8.14 cm2 V−1 s−1, and the lowest subthreshold swing (S.S.) of 0.395 V/decade, with a threshold voltage (Vth) of −0.14 V. However, increases in Ioff and S.S. and decr… Show more

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“…Reference [43] Reference [44] Reference [18] Reference [45] µ, cm 2 V −1 10, oxygen ions can be attracted towards the dielectric surface under a small gate voltage due to the strong field effect of high-k HfLaO, leaving oxygen vacancies in the a-IGZO film to form conductive filaments for conductance switching [50,51]. Another reason should be that the positively-charged oxygen vacancies formed near the source electrode can enhance the injection of electrons from the source electrode to the a-IGZO film, thus contributing to the synaptic functions of the device.…”
Section: This Workmentioning
confidence: 99%
“…Reference [43] Reference [44] Reference [18] Reference [45] µ, cm 2 V −1 10, oxygen ions can be attracted towards the dielectric surface under a small gate voltage due to the strong field effect of high-k HfLaO, leaving oxygen vacancies in the a-IGZO film to form conductive filaments for conductance switching [50,51]. Another reason should be that the positively-charged oxygen vacancies formed near the source electrode can enhance the injection of electrons from the source electrode to the a-IGZO film, thus contributing to the synaptic functions of the device.…”
Section: This Workmentioning
confidence: 99%