“…To achieve perfect ternary CdTe-based compounds such as CZT, it is essential to understand the atomic and electronic structure and the incorporation kinetics of Zn doping in CdTe [15][16][17] and the contact performance depends strongly both on the electrode metal and semiconductor surface preparation before metallization [18]. This led to an increasing interest in the development of wide band gap absorbers based on the alloys of ZnTe and CdTe, with a variety of advantageous properties.…”