Electrical and magneto resistance studies of bulk Ga1−xNixSb ternary alloys

Kamilla, Sushanta Kumar; Hazra, Surajit Kumar; Samantaray, B. K.; Basu, S.

doi:10.1016/j.solidstatesciences.2010.11.020

Cited by 9 publications

(2 citation statements)

References 28 publications

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“…Específicamente el compuesto binario GaSb se encuentra entre los semiconductores III-V como material relevante para la disposición de aleaciones o sistemas ternarios con elementos de transición [6,7]; este interés, se suscita alrededor de la obtención de sistemas con bajo valor de la banda de energía prohibida o "band gap" y/o la evidencia de propiedades magnéticas para aplicaciones en espintrónica [8].…”

Section: Introductionunclassified

INFLUENCIA DE LA TEMPERATURA DE SUSTRATO SOBRE LAS PROPIEDADES ÓPTICAS Y ESTRUCTURALES DE ALEACIONES GaSb:Ni

Quiroz

Dussán

2018

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ResumenPelículas delgadas de aleaciones ternarias de GaSb:Ni fueron preparadas por el método de pulverización catódica (DC magnetrón Co-Sputtering) variando la temperatura de sustrato (Ts). A partir de medidas de transmitancia espectral y difracción de rayos X (XRD) fueron obtenidas las constantesópticas y las propiedades estructurales del material, respectivamente. Fases predominantes de GaSb y NiSb fueron observadas para todas las variaciones de Ts. A partir de medidas de absorción del material el valor de la banda de energía prohibida o "band gap" fue obtenido, variando entre 0,63 eV y 0,72 eV. Se reporta el coeficiente de extinción κ en función de la longitud de onda de las películas de GaSb:Ni.

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Section: Introductionunclassified

INFLUENCIA DE LA TEMPERATURA DE SUSTRATO SOBRE LAS PROPIEDADES ÓPTICAS Y ESTRUCTURALES DE ALEACIONES GaSb:Ni

Quiroz

Dussán

2018

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“…There is a particular interest in DMS compounds based on III-V semiconductors due to its easy fabrication process and silicon-based architectural similarity, that would be allowed for industrial applications [16][17][18]. For these reasons, DMS compounds based on III-V semiconductor matrices, doped with Mn ions, have been recently studied [16,[19][20][21]. A relatively low Curie temperature [22], for Mn ion concentration below 10%, has been shown by Ga 1-x Mn x As and Ga 1-x Mn x Sb when grown by Molecular Beam Epitaxy (MBE).…”

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The effect of Mn2Sb2 and Mn2Sb secondary phases on magnetism in (GaMn)Sb thin films

et al. 2020

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In this work, a detailed study of structural, electrical and magnetic characterization of (GaMn)Sb diluted magnetic semiconductors (DMS) is presented. (GaMn)Sb thin films were grown by DC magnetron co-sputtering method as an innovative procedure to fabricate III-V DMS. The presence of unusual Mn 2 Sb 2 and Mn 2 Sb secondary phases, induced by substrate temperature and deposition time, were revealed through XRD measurements. Magnetization measurements allow determining crossover between a paramagnetic-like to a ferromagnetic-like behavior controlled by secondary phases. It was found that both, the magnetic remanence and magnetic coercivity, increases with substrate temperature. Interestingly, the magnetic response is paramagnetic at lower deposition times and substrate temperatures, and XRD measurements suggest the absence of Mn 2 Sb and Mn 2 Sb 2 in secondary phases. For longer deposition times or higher substrate temperature, XRD shows the presence of Mn 2 Sb 2 and Mn 2 Sb phases and ferromagnetic-like behavior. The DC resistivity of our samples was characterized and the carrier density was determined by Hall measurements and, in contrast with the reported in other studies, found them to be a p-type semiconductor with carrier densities as big as one order of magnitude larger than reported values. From the ferromagnetic-like samples, evidence of an anomalous Hall-effect in the sample was found, with higher magnetic saturation and a anomalous Hall conductivity of 2380 S/cm. All the results point to a contribution of the secondary phases to the overall magnetic response of the samples used, and suggest the importance of studying the formation of secondary phases in the growth of DMS, especially, for the case of (GaMn)Sb where Mn ion can have multiple oxidation states.

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