Electrical and memory window properties of Sr0.8-xBaxBi2.2Ta2-yZryO9 ferroelectric gate in metal-ferroelectric-insulator-semiconductor structure

Bozgeyik, Mehmet S.; Cross, Jeffrey S.; Ishiwara, Hiroshi; Shinozaki, Kazuo

doi:10.1007/s10832-012-9698-3

Cited by 14 publications

(3 citation statements)

References 23 publications

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“…Once the gate dielectric constant in the MFIS structure is much greater than that of the insulator layer, most of the applied voltage drop occurs across the thin buffer layer which results in a gate ferroelectric thin film material having a great depolarization field, but not enough electric field to switch. Besides low permittivity, the gate ferroelectric film requires a relatively low remanent polarization (P r ) of around 1 µC cm −2 to match the requisite charge for channel conductivity controlling in the memory process [8]. Hence, the key parameters of ferroelectric thin films for 1T-type FeRAMs are quite small dielectric constant (ε r ) and remanent polarization (P r ) around 1 µC cm −2 as discussed by the related researchers [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Investigating structural features of Ba and Zr co-substituted strontium bismuth tantalate thin films

Bozgeyik

2019

Bull Mater Sci

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Structural (crystal and microstructure), chemical and electronic states, and ferroelectric and electrical features of Ba and Zr co-substituted strontium bismuth tantalate (SBT) were probed in this study. Distinctly, Ba and Zr were substituted for Ta and Sr sites of Sr 0.8 Bi 2.2 Ta 2 O 9 in the form of Sr 0.8−x Ba x Bi 2.2 Ta 2−y Zr y O 9. To investigate the impact of the co-substitution on the crystal structure, microstructure, ferroelectric and electrical properties, Sr 0.8−x Ba x Bi 2.2 Ta 2−y Zr y O 9 thin films were deposited on Pt/Ti/SiO 2 /Si(100) wafers by sol-gel spin by coating method. Crystal structure, microstructure, chemical and electronic states, ferroelectric, capacitance and leakage current characteristics of the films were studied to investigate potential for one transistor type ferroelectric random access memories (1T-type FeRAMs). Successful substitutions up to 10 mol% lead to reduction of double remanent polarization (2P r) to 10.26 µC cm −2 , and dielectric constant (ε r) to 135. These values demonstrate that successful co-substitution of limited Ba and Zr in SBT with stable crystal structure has the ability to decrease P r and ε r values of the ferroelectric material which can be a candidate gate to be utilized in ferroelectric field-effect transistors (FeFETs) for 1T-type FeRAM applications.

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Section: Introductionmentioning

confidence: 99%

Investigating structural features of Ba and Zr co-substituted strontium bismuth tantalate thin films

Bozgeyik

2019

Bull Mater Sci

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“…Barium strontium titanate (Ba 1-x Sr x TiO 3 , abbreviated as BST) and strontium barium niobate (Sr x Ba 1-x Nb 2 O 6 , abbreviated as SBN) have attracted much attention from the view of fundamental and application. They exhibit a great variety of excellent pyroelectric, dielectric and faster response time of infrared radiation properties [1,2] . In spite of their good properties, there are some restrictions in applications, for example difficult synthesis and costly installations for SBN single crystal, large grain size and abnormal grain growth for polycrystalline SBN ceramics, high raw materials cost for SBN thin films [3][4][5] .…”

Section: Introductionmentioning

confidence: 99%

Pyroelectric Properties of SBN/BST by Powder-Sol Method

Shan

Wang

et al. 2013

AMM

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0.7BaO·0.3SrO·0.3Nb2O5·0.7TiO2 (SBN/BST) composite ceramics werefabricated using a Powder-Sol (P-S) method with Nb2O5fine powder suspended in the barium strontium titanate (abbreviated as BST) solsolution. By X-ray diffraction (XRD) investigations, it is found that thetetragonal tungsten bronze (TTB) phase and perovskite phase were co-present incompositions. The average grain size of BST and SBN phase is 140 nm and 2.2 μm,respectively. The room temperature relative dielectric constant is 1445 forthis sample measured at 1 kHz and zero bias. In the room temperature, thepyroelectric coefficient of the 0.7BaO·0.3SrO·0.3Nb2O5·0.7TiO2is 39 nc/cm2·°C. The maximum value of FDis about 2.4×10-5 Pa-1/2at 45°C.

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“…With an increase in light intensity, a greater number of electrons will possess sufficient energy to overcome the greater barrier. As a result, the Φ b will increase in proportion to the density of illumination and the bias voltage[25][26][27][28][29]. Additionally, there is a drop in the device's saturation current when it is illuminated.…”

mentioning

confidence: 99%

Investigation of illumination-dependent electrical and photodiode properties and conduction mechanism of the Al/p-Si contact with Schiff base compound (Pyr-Pic) interlayer

Oruç,

Tezcan,

Tuğluoğlu

et al. 2024

Phys. Scr.

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In this paper, an organic semiconductor, N-(2-((pyren-4-yl)methyleneamino)ethyl)-5- nitropyridin-2-amine (Pyr-Pic), was synthesized and was used as an interfacial organic layer to fabrication of Al/Pyr-Pic/p-Si/Al diode. The device's characteristic parameters were determined under various operating situations using current-voltage (I-V) measurements. Thermionic emission theory (TE), the Cheung methodology, and Norde functions were the three methods used to determine the device's electrical properties, such as the ideality factor, barrier height, and series resistance. Based on the I-V measurements conducted under illumination circumstances, the fabricated device exhibits photoresponse properties in the reverse bias region. An examination of the forward log(I)-log(V) plot of the Al/Pyr-Pic/p-Si diode indicated that ohmic conduction dominates carrier transport in the lower bias regions, while the space-charge-limited current (SCLC) governs transport in the medium bias regions, and the trap-charge limit current (TCLC) mechanism is responsible for transport in the higher bias regions. The current voltage mechanisms in the reverse bias area can be characterized by using Poole-Frenkel emission (PFE) and Schottky emission (SE) theories. The device exhibits photovoltaic characteristics when it is illuminated through an Al electrode. The typical photovoltaic parameters were estimated at room temperature and under illumination conditions.

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Electrical and memory window properties of Sr0.8-xBaxBi2.2Ta2-yZryO9 ferroelectric gate in metal-ferroelectric-insulator-semiconductor structure

Cited by 14 publications

References 23 publications

Investigating structural features of Ba and Zr co-substituted strontium bismuth tantalate thin films

Investigating structural features of Ba and Zr co-substituted strontium bismuth tantalate thin films

Pyroelectric Properties of SBN/BST by Powder-Sol Method

Investigation of illumination-dependent electrical and photodiode properties and conduction mechanism of the Al/p-Si contact with Schiff base compound (Pyr-Pic) interlayer

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