Electrical and microscopic characterization of p⁺-type layers formed in HgCdTe by arsenic implantation

Abstract

The Hall-effect (with mobility spectrum analysis) and capacitance measurements were combined with transmission electron microscopy for the study of molecular-beam epitaxy-grown n-type Hg1-xCdxTe (x = 0.22) films subjected to various operations used in the fabrication of p +-n photodiode structures. The operations included arsenic ion implantation, activation annealing and extra annealings aimed at investigation of the details of the p +-n junction formation. A detailed characterization of p+-type layers formed by the implantation was done. A high degree of arsenic activation by activation annealing was demonstrated, along with the annihilation of implantation-induced extended (dislocation loops) and quasi-point defects, and the disappearance of electrically active centres associated with them. The annealing was also shown to cause the activation of residual acceptors, changing the degree of electrical compensation in the n-‘base’ of some of the p +-n structures.

Design of non-equilibrium photovoltaic High-Operating-Temperature (HOT) mid-wavelength infrared HgCdTe detector

“…This variable concentration and band gap heterostructure were usually grow by molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD). The P + -type HgCdTe layer fabricated by MBE is achieved by arsenic(As) doping, followed by high temperature annealing to activate As [21,22]. High temperature annealing is required because the implanted As existed as Asx cluster, which should become As atom to substitute the Te to accomplish the role of p-type doping.…”

Изотипные гетероструктуры n-AlGaAs/n-GaAs, оптимизированные для эффективной межзонной излучательной рекомбинации при накачке электрическим током

“…В частности, не всегда может быть реализована диодная p−n-структура, обеспечивающая эффективную инжекцию электронов и дырок в активную область. Например, существуют технологические трудности при создании полупроводниковых слоев с p-типом проводимости в материалах HgCdTe или AlGaN [6][7][8][9]. Как альтернатива прямой токовой накачке может использоваться оптическая накачка или накачка электронным лучом, что не всегда эффективно или же может значительно усложнять систему.…”