Electrical and optical characterization of extended defects in silicon mono‐cast material

Moralejo, B.; Tejero, A.; Hortelano, V.; Martínez, O.; Jiménez, J.; Parra, Vicente

doi:10.1002/pssc.201200248

Cited by 7 publications

(2 citation statements)

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“…Tsoutsouva et al 53 confirmed that sub‐GBs are the major sources for the development of dislocation cascades and clusters and also reported that the impurities such as N, O, and C preferentially precipitated along sub‐GBs, as shown in Figure 13. Moralejo et al 55 found that impurities were inhomogeneously distributed at the sub‐GBs and the impurity decorated sub‐GBs showed stronger recombination activities compared with “clean” sub‐GBs.…”

Section: Defects In Cast Mono‐like Silicon and Methods To Suppress Themmentioning

confidence: 99%

Defect engineering in cast mono‐like silicon: A review

Song

2020

Progress in Photovoltaics

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Cast mono‐like silicon is a promising material for next‐generation silicon solar cells with higher efficiency and lower cost compared with currently commercialized silicon solar cells. So far, cast mono‐like silicon technique still faces several problems, including multicrystallization, dislocation clusters, sub‐grain boundaries, and impurity contamination, which hinder its mass‐scale applications in photovoltaic industry. In this review, we will introduce these common problems in turn and discuss a multitude of the reported studies on eliminating these problems. Furthermore, light and elevated temperature‐induced degradation (LeTID) was recently reported to be a severe problem of cast mono‐like silicon solar cells, which can cause power loss over 10% relative. This review will introduce the behaviors and the proposed mechanisms of LeTID as well as the methods to suppress LeTID in Section 4. In the subsequent section, the efficiency potential and distribution of cast mono‐like silicon solar cells are discussed. At last, a comprehensive summary will be given for this review.

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Section: Defects In Cast Mono‐like Silicon and Methods To Suppress Themmentioning

confidence: 99%

Defect engineering in cast mono‐like silicon: A review

Song

2020

Progress in Photovoltaics

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“…9) It has been reported that sub-GBs in QSC silicon, originating from lattice mismatch between adjacent seeds, can severely degrade the solar cell performances. [10][11][12][13][14][15][16][17] It was found that the misorientation of such sub-GBs in QSC silicon is usually smaller than 3°, 10) which belong to small-angle (SA) GBs. Up to now, substantial research efforts have been devoted to the investigation on the recombination activity of SA GBs.…”

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confidence: 99%

Recombination activity of sub-grain boundaries and dislocation arrays in quasi-single crystalline silicon

Xuan

Yuan

et al. 2019

Appl. Phys. Express

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Crystallographic defects in quasi-single crystalline (QSC) silicon are seriously detrimental to the performances of solar cells. In this work, we have identified these crystallographic defects as sub-grain boundaries (sub-GBs) and dislocation arrays (DAs). Sub-GBs with misorientation of >0.7° always show strong recombination activity, which are the main cause for the efficiency degradation of solar cells. Moreover, the recombination activity of sub-GBs with misorientation of <0.7° and DAs is strongly dependent on dislocation density and metal contamination level. Phosphorus gettering is an effective way to reduce the effect of metal contamination at the sub-GBs and DAs in QSC silicon.

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Seed‐Assisted Growth of Cast‐Mono Silicon for Photovoltaic Application: Challenges and Strategies

et al. 2020

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Silicon has dominated the photovoltaic material market for a few decades. In contrast to perfectly crystallized Czochralski (CZ) silicon, casting multi‐crystalline silicon attracts much more attention due to its low cost and high throughput, which meets the increasing demands of the rapidly developing photovoltaic industry. However, the unavoidable appearance of crystallographic defects seriously limits the performance improvement of solar cells. In this Review, a general overview of the recent efforts in high‐quality casting silicon crystal techniques is provided, including the dendritic cast method, high‐performance multi‐crystalline silicon, and cast‐mono silicon. Then, special attention is focused on the seed‐assisted growth of cast‐mono silicon, which shares some of the most favorable features of high solar cell efficiency offered by well‐established CZ silicon and cost‐effectiveness of cast multi‐crystalline silicon. Nevertheless, this innovative growth technique facing a few challenges once impeded its mass scale production. The main issues concerning nucleation and growth control, extended defects as well as impurity contamination are addressed, which pave the way for this high‐potential technology in applications for high‐efficiency and low‐cost solar cells.

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Electrical and optical characterization of extended defects in silicon mono‐cast material

Cited by 7 publications

References 0 publications

Defect engineering in cast mono‐like silicon: A review

Defect engineering in cast mono‐like silicon: A review

Recombination activity of sub-grain boundaries and dislocation arrays in quasi-single crystalline silicon

Seed‐Assisted Growth of Cast‐Mono Silicon for Photovoltaic Application: Challenges and Strategies

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