Electrical and optical properties of layer-stacked graphene transparent electrodes using self-supporting transfer method

Ning, Jing; Wang, Dong; Zhang, Chunfu; Wang, Zhizhe; Tang, Shi; Chen, Dazheng; Shi, Yonggui; Zhang, Jincheng; Hao, Yue

doi:10.1016/j.synthmet.2015.02.007

Cited by 13 publications

(8 citation statements)

References 20 publications

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“…By contrast, the mobility of MLG (2590 cm 2 V –1 s –1 ) is much higher than that of SLG (641 cm 2 V –1 s –1 ). The high mobility of MLG has also been reported by previous studies; , however, these studies did not identify the reason for the high mobility. We interpret the high mobility of MLG as a result of the much higher mobility of charge carriers in the inner layer, which can be regarded as an undoped graphene layer.…”

Section: Results and Discussionmentioning

confidence: 60%

Selective Atomic Layer Deposition of Metals on Graphene for Transparent Conducting Electrode Application

Kim¹,

Nabeya

Han

et al. 2020

ACS Appl. Mater. Interfaces

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Although graphene has considerable potential as a next-generation transparent conducting electrode (TCE) material owing to its excellent optical transparency and flexibility, its electrical properties require further improvement for industrial application. This study reports a pathway of doping graphene by selective atomic layer deposition (ALD) of metals to elevate the electrical conductivity of graphene. Introduction of a novel Pt precursor [dimethyl(N,N-dimethyl-3-butene-1-amine-N)platinum(II); C8H19NPt; DDAP] facilitates a low-temperature (165 °C) process. The sheet resistance (R s) of graphene is reduced significantly from 471 to 86.8 Ω sq–1 after 200 cycles of Pt ALD, while the optical transmittance at 550 nm (T) is maintained above 90% up to 200 cycles due to the selective growth of Pt on the defects of graphene. Furthermore, comprehensive analysis, including metal (Ru, Pt, and Ni) ALD on graphene, metal (Ru, Pt, Ni, Au, and Co) evaporation on graphene, and change in the ALD chemicals, demonstrates that ALD allows efficient graphene doping and the oxygen affinity of the metal is one of the key properties for efficient graphene doping. Finally, Pt ALD is applied to a multilayer graphene to further reduce R s down to 75.8 Ω sq–1 yet to be highly transparent (T: 87.3%) after 200 cycles. In summary, the selective ALD of metals opens a way of improving the electrical properties of graphene to a level required for the industrial TCE application and has the potential to promote development of other types of functional metal–graphene composites.

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Section: Results and Discussionmentioning

confidence: 60%

Selective Atomic Layer Deposition of Metals on Graphene for Transparent Conducting Electrode Application

Kim¹,

Nabeya

Han

et al. 2020

ACS Appl. Mater. Interfaces

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“…(a) SEM image of the nanocomposite ink showing randomly dispersed NWs in the polymer matrix. (b) Transparency and (c) sheet resistance of the printed film with the (d) ϕ TC comparison with ITO, graphene, CNT, and PEDOT:PSS . (e) A blue shift is observed in the Raman spectra with Ag NW concentration because of change in the resonant structure of PEDOT from benzoid to quinoid.…”

Section: Resultsmentioning

confidence: 99%

“…Among the films obtained from different layers, the two-layer sample shows the highest values of ϕ TC because of its good transparency of around 80% and sheet resistance less than 7 Ω/sq. ϕ TC of our composite film is compared, in Figure 2d, with conventional transparent conductors, such as ITO, 12 graphene sheets, 40 CNTs, 5 and PEDOT:PSS. 10 Comparatively, our composite film has better ϕ TC , except for graphene sheets.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

Printable Silver Nanowire and PEDOT:PSS Nanocomposite Ink for Flexible Transparent Conducting Applications

Nair

Pakkathillam

Kumar

et al. 2020

ACS Appl. Electron. Mater.

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Patterned deposition of highly flexible transparent conducting materials is essential to realize stretchable optoelectronic devices. Silver nanowires (NWs) are suitable for these applications because they possess high electrical conductivity and good optical transparency. However, NWs have poor surface adhesion and large roughness. Embedding them in a conducting polymer, such as poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PE-DOT:PSS), is one way to overcome these disadvantages without affecting the optoelectronic properties. However, this is normally a two-step deposition process and difficult to pattern directly. In this work, we have formulated a stable and printable nanocomposite ink consisting of Ag NWs and PEDOT:PSS. This ink can be directly used for patterned deposition in a single-step process. The printed film shows 86% transparency and 23 Ω/sq sheet resistance, which is suitable for flexible transparent electrode applications. The printed film shows good adhesion and excellent stability to mechanical deformation, with less than 20% resistance variation after 10,000 bending cycles. The nanocomposite also exhibits improved thermal stability, planarity, reduced contact resistance, and good optical transparency when compared to pure Ag NWs. We demonstrate suitability of this nanocomposite using two applications −a printed transparent flexible antenna radiating at Wi-Fi frequencies and a printed transparent flexible heater suitable for antifogging applications. The nanocomposite properties make it suitable as a transparent electrode in flexible optoelectronic devices such as photovoltaics and light-emitting diodes.

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“…Meanwhile, the 2D peak of the graphene is slightly shifted compared to that of the pristine graphene. Generally, the 2D band, which is related to the in‐plane strain, is a second‐order double resonance band near the K point . It represents the transferred graphene with little compressive stress after the Cu foil was removed.…”

Section: Resultsmentioning

confidence: 99%

Transferable GaN Enabled by Selective Nucleation of AlN on Graphene for High‐Brightness Violet Light‐Emitting Diodes

Jia

Ning

Zhang

et al. 2019

Advanced Optical Materials

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some outstanding features, such as a high carrier mobility, [8][9][10] a high thermal conductivity, [11] flexibility, [12] and visible transparency. [13,14] Moreover, it can be used as a removable layer for the epitaxial growth of III-Ns, thus providing the foundation for a new field of transferable and flexible LEDs. [15,16] Recently, graphene has been used as a buffer layer for the van der Waals epitaxy growth of a GaN epilayer to overcome the substantial thermal expansion coefficient and in-plane lattice constant mismatch between the GaN epilayer and sapphire substrate (c-Al 2 O 3 ), which causes a significant strain in the GaN epilayer. However, because the graphene surface lacks dangling bonds, the nucleation of nitrides on graphene is restricted, and clusters are easily formed. [17,18] In this study, theoretical calculations using first-principles calculations based on density functional theory (DFT) were carefully conducted to further examine the formation mechanism of AlN and GaN on graphene. We found that AlN selectively grows on graphene, and we identified its optimal nucleation site. We obtained the adsorption probability of Al atoms at various positions on the graphene CC ring and found that the hollow of the complete graphene CC ring and the center of the broken graphene CC ring are the best adsorption positions under different states of the graphene. Based on this, we innovatively inserted an AlN composite nucleation layer between graphene and GaN, which was grown by metal organic chemical vapor deposition (MOCVD) using time-distributed and constant-pressure (TDCP) growth. The growth process for AlN is divided into three stages. Under the same pressure, different flow rates, and growth temperatures are used for each stage. By controlling the growth time at different flow rates, an AlN composite nucleation layer on graphene can be formed. By introducing the selective nucleation of an AlN composite layer and graphene, the biaxial stress of the GaN film was effectively released, leading to transferable and low density dislocations in the GaN film and the In 0.1 Ga 0.9 N/GaN multiple quantum well structures. Note that LEDs with an ultrahigh light output power (LOP) of 260.5 mW at a small current of 560 mA were achieved. Our study demonstrates a practical application of an AlN composite nucleation layer grown on graphene that may result in A transferable GaN epilayer is grown on an improved aluminum nitride (AlN)/graphene composite substrate. In this study, theoretical calculations using first-principles calculations based on density functional theory are carefully conducted to further examine the formation mechanism of AlN on graphene. AlN selectively grows on graphene via its optimal nucleation site, which leads to the selective nucleation of AlN on graphene via quasi-van der Waals epitaxy. Thus, an AlN composite nucleation layer is innovatively inserted between graphene and GaN, using the time-distributed and constant-pressure growth method by metal organic chemical vapor deposition. Moreover, a hi...

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Electrical and optical properties of layer-stacked graphene transparent electrodes using self-supporting transfer method

Cited by 13 publications

References 20 publications

Selective Atomic Layer Deposition of Metals on Graphene for Transparent Conducting Electrode Application

Selective Atomic Layer Deposition of Metals on Graphene for Transparent Conducting Electrode Application

Printable Silver Nanowire and PEDOT:PSS Nanocomposite Ink for Flexible Transparent Conducting Applications

Transferable GaN Enabled by Selective Nucleation of AlN on Graphene for High‐Brightness Violet Light‐Emitting Diodes

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