Electrical and optical properties of thin Fe1−xCoxSi2 films

Teichert, S.; Kilper, R.; Franke, T.; Erben, J.; Häußler, P.; Henrion, W.; Lange, H.; Panknin, D.

doi:10.1016/0169-4332(95)00094-1

Cited by 13 publications

(4 citation statements)

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“…18 These alloys have also a wide range of applications in magnetic data recording storage and printing devices. [22][23][24] This work reports on the impregnation of cylindricallike shape nanoporous p-type Si by electrodeposited Fe-Co alloys, in comparison with their related pure metals. [22][23][24] This work reports on the impregnation of cylindricallike shape nanoporous p-type Si by electrodeposited Fe-Co alloys, in comparison with their related pure metals.…”

Section: Introductionmentioning

confidence: 99%

Electrodeposition of Fe–Co Alloys into Nanoporous p-type Silicon: Influence of the Electrolyte Composition

et al. 2002

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The cathodic deposition of iron-cobalt alloys inside the pores of anodically formed nanoporous silicon (PS) from p-type Si substrate is investigated with respect to the electrolyte composition. The samples were characterized by scanning electron microscopy, energy dispersive spectrometry, Auger electron spectroscopy, and Fourier transform infrared spectroscopy. Results showed that the nucleation of pure cobalt started at the bottom of the pores and the nucleation of pure iron occurred all over the pore walls, leading to a preferential deposition on top surface of the porous layer. Nevertheless, a low concentration of Co 2+ ions (5 at.%) in the electrolyte drastically improved the penetration of iron into the pores. As a result, a good filling of the pores with Co metal as well as with Fe-Co alloys was achieved. It was also shown that the deposition process oxidizes the structure mainly at the pore walls. The results of our investigation indicate that the mechanisms occurring during the electrodeposition of metals on porous p-type silicon substrates are completely different depending on the kind of electrolyte used: pure iron-based electrolyte or cobalt-based solutions. A complete understanding of the deposition process requires further analyses of the carrier transport in PS and of the charge exchange at the Si/electrolyte and PS/electrolyte interfaces. These new results involving the deposition of iron-group materials into porous p-type silicon are useful for future silicon technologies. a) Present address: Département des Matériaux et Composants,

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Section: Introductionmentioning

confidence: 99%

Electrodeposition of Fe–Co Alloys into Nanoporous p-type Silicon: Influence of the Electrolyte Composition

et al. 2002

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“…Decreases in the Hall mobility were observed with the increasing Co content [30,31]. The absolute values of the Hall mobility strongly depend on the crystalline and compositional qualities of the crystals [30]. Kamabayashi et al found in unintentionally doped crystals, a switch in the sign of the thermopower from p to n with an increasing silicon content [25].…”

Section: Resultsmentioning

confidence: 94%

“…Co atoms can be incorporated into b-FeSi 2 by the molten salt method [11], and Co atoms are substituted at the Fe sites [29]. Decreases in the Hall mobility were observed with the increasing Co content [30,31]. The absolute values of the Hall mobility strongly depend on the crystalline and compositional qualities of the crystals [30].…”

Section: Resultsmentioning

confidence: 99%

Effect of Cu or Co addition on β-FeSi2 growth by molten salt method

Wen

Yamashita

et al. 2012

Journal of Crystal Growth

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“…So far CoSi 2 was obtained by Czochralski, Bridgman and floating-zone methods. First research shown that through doping of CoSi 2 by iron or FeSi 2 by cobalt we can change electrical and optical properties of Co 1-x Fe x Si 2 [7,8] and Fe 1-x Co x Si 2 type [9,10] thin films. Dèzsi et al [7] studied over doped of CoSi 2 by iron, but they have not presented information about procedure and experimental conditions.…”

Section: Introductionmentioning

confidence: 99%