Electrical and optical properties of some M2v−bN3vi−b semiconductors

Black, John B.; Conwell, E. M.; Seigle, L.; Spencer, Charles W.

doi:10.1016/0022-3697(57)90090-2

Cited by 443 publications

(213 citation statements)

References 7 publications

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“…In particular, we note that Bi 2 Se 3 has an energy gap of about 0.3 eV, which agrees well with the experimental data (about 0.2-0.3 eV; refs 18,19). In the following, we take the band structure of Bi 2 Se 3 as an example.…”

Section: Band Structure and Parity Analysissupporting

confidence: 88%

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

et al. 2009

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Topological insulators are new states of quantum matter in which surface states residing in the bulk insulating gap of such systems are protected by time-reversal symmetry. The study of such states was originally inspired by the robustness to scattering of conducting edge states in quantum Hall systems. Recently, such analogies have resulted in the discovery of topologically protected states in two-dimensional and three-dimensional band insulators with large spin-orbit coupling. So far, the only known three-dimensional topological insulator is Bi R ecently, the subject of time-reversal-invariant topological insulators has attracted great attention in condensed-matter physics [1][2][3][4][5][6][7][8][9][10][11][12] . Topological insulators in two or three dimensions have insulating energy gaps in the bulk, and gapless edge or surface states on the sample boundary that are protected by time-reversal symmetry. The surface states of a three-dimensional (3D) topological insulator consist of an odd number of massless Dirac cones, with a single Dirac cone being the simplest case. The existence of an odd number of massless Dirac cones on the surface is ensured by the Z 2 topological invariant 7-9 of the bulk. Furthermore, owing to the Kramers theorem, no time-reversalinvariant perturbation can open up an insulating gap at the Dirac point on the surface. However, a topological insulator can become fully insulating both in the bulk and on the surface if a timereversal-breaking perturbation is introduced on the surface. In this case, the electromagnetic response of three-dimensional (3D) topological insulators is described by the topological θ term of the form S θ = (θ /2π)(α/2π) d 3 x dt E · B, where E and B are the conventional electromagnetic fields and α is the fine-structure constant 10 . θ = 0 describes a conventional insulator, whereas θ = π describes topological insulators. Such a physically measurable and topologically non-trivial response originates from the odd number of Dirac fermions on the surface of a topological insulator.Soon after the theoretical prediction 5 , the 2D topological insulator exhibiting the quantum spin Hall effect was experimentally observed in HgTe quantum wells 6 . The electronic states of the 2D HgTe quantum wells are well described by a 2 + 1-dimensional Dirac equation where the mass term is continuously tunable by the thickness of the quantum well. Beyond a critical thickness, the Dirac mass term of the 2D quantum well changes sign from being positive to negative, and a pair of gapless helical edge states appears inside the bulk energy gap. This microscopic mechanism for obtaining topological insulators by inverting the bulk Dirac gap spectrum can also be generalized to other 2D and 3D systems. The guiding principle is to search for insulators where the

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Section: Band Structure and Parity Analysissupporting

confidence: 88%

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

et al. 2009

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“…Taking the bottom of the 'U' band as the bulk conduction-band minimum, we estimate that a bandgap of about 0.3 eV is realized in the bulk of the undoped material. Our ARPES estimated bandgap is in good agreement with the value deduced from bulk physical measurements [23] and from other calculations that report the bulk band structure [20,24]. This suggests that the magnitude of band bending near the surface is not larger than 0.05 eV.…”

supporting

confidence: 90%

“…An intrinsic bandgap of approximately 0.35 eV is typically measured in experiments [22,23], whereas theoretical calculations estimate the gap to be in the range of 0. 24-0.3 eV (refs 20, 24).…”

mentioning

confidence: 99%

Observation of a large-gap topological-insulator class with a single Dirac cone on the surface

et al. 2009

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“…Band structure calculations for Sb 2 S 3 using PBE-DFT show that it posses an indirect fundamental band gap of 1.35 eV with the valence band maximum and conduction band minimum located at G and Y, respectively [32]. Sb 2 S 3 has a direct optical band gap with experimental studies reporting a range from 1.66-2.24 eV [14,32,33,34,35,36,37,38,39,40,41], which is found to increase with the film thickness and temperature [42,43]. The nature of the band gap for Sb 2 Se 3 is also unclear but an experimental range of 1.00-1.82 eV has been reported, where the lower energy transitions are considered to be indirect [44,45,46,47].…”

Section: Introductionmentioning

confidence: 98%

The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications

Carey

Allen

Scanlon

et al. 2014

Journal of Solid State Chemistry

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The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications, Journal of Solid State Chemistry, http: //dx.doi.org/10. 1016/j.jssc.2014.02.014 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting galley proof before it is published in its final citable form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. www.elsevier.com/locate/jsscThe electronic structure of the antimony chalcogenide series:Prospects for optoelectronic applications

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Electrical and optical properties of some M2v−bN3vi−b semiconductors

Cited by 443 publications

References 7 publications

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

Observation of a large-gap topological-insulator class with a single Dirac cone on the surface

The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications

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