2010
DOI: 10.1021/jp106641j
|View full text |Cite
|
Sign up to set email alerts
|

Electrical and Optical Properties of ZnO Processed by Atomic Layer Deposition in Inverted Polymer Solar Cells

Abstract: We report on the photovoltaic properties of inverted polymer solar cells where the transparent electron-collecting electrode is formed by a ZnO-modified indium−tin oxide (ITO) electrode. The ZnO layers were deposited by atomic layer deposition (ALD) with varying thicknesses from 0.1 to 100 nm. The work function, surface roughness, and morphology of ITO/ZnO were found to be independent of the ZnO thickness. However, the device performance was found to be strongly dependent on a critical ZnO thickness, around 10… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
104
0
1

Year Published

2012
2012
2016
2016

Publication Types

Select...
7
1

Relationship

0
8

Authors

Journals

citations
Cited by 117 publications
(105 citation statements)
references
References 27 publications
0
104
0
1
Order By: Relevance
“…Though ZnO ETL for solar cells generally can be prepared by various methods, such as atomic layer deposition, [ 29 ] electro deposition, [ 25 ] spin-coating, [ 30 ] spray-coating, [ 31 ] and the sol-gel technique, [ 26,32 ] it is well known that low-temperature solutionprocessed amorphous ZnO layers usually yield poor device performance with a reported maximum PCE of ≈3.2%. [ 31 ] This indicates that low-temperature processing of ZnO may introduce substantial microstructural and/or morphological imperfections into the donor-acceptor network, which could be detrimental to many applications.…”
Section: Introductionmentioning
confidence: 99%
“…Though ZnO ETL for solar cells generally can be prepared by various methods, such as atomic layer deposition, [ 29 ] electro deposition, [ 25 ] spin-coating, [ 30 ] spray-coating, [ 31 ] and the sol-gel technique, [ 26,32 ] it is well known that low-temperature solutionprocessed amorphous ZnO layers usually yield poor device performance with a reported maximum PCE of ≈3.2%. [ 31 ] This indicates that low-temperature processing of ZnO may introduce substantial microstructural and/or morphological imperfections into the donor-acceptor network, which could be detrimental to many applications.…”
Section: Introductionmentioning
confidence: 99%
“…The conductivity of ZnO films is thought to be negatively affected by chemisorbed oxygen and this can in turn negatively impact the efficiency of the PCS. 23 The surface conductivity of ZnO films is decreased as chemisorbed oxygen molecules capture electrons from the ZnO conduction band creating a near-surface depletion region with a then comparatively high resistivity. [24][25][26] Oxygen molecules can also diffuse into the ZnO film where they chemisorb and create a potential barrier between and a depletion region along either side of the grain boundary, thus reducing the bulk conductivity of the film.…”
Section: Introductionmentioning
confidence: 99%
“…As we all know, the size of the crystal domains could be calculated according to the Scherrer equation [42]:…”
Section: Xrd Spectramentioning
confidence: 99%
“…Inverted photovoltaic devices, which have the advantage of stability in air, have recently attracted high interest [42]. To investigate the relationship between the chemical structures of the fullerene derivatives and photovoltaic properties, we used OIHC60P, OIMC60P, OIBC60P, OIB2FC60P, and OIB5FC60P as acceptors to fabricate inverted photovoltaic devices (ITO/ZnO/P3HT: fullerene derivatives/MoO 3 /Ag).…”
Section: Photovoltaic Propertiesmentioning
confidence: 99%