Device-quality ITO by pulsed Nd:YAG laser, successfully used for Organic Light Emitting Device (OLED), was deposited at room temperature and 250 o C. Although the optical transmittance of > 90% is achieved in the visible range, the ITO film resistivity is too high to enable an efficient OLED, as compared to that reported for KrF laser deposited ITO. At 250 and laser wavelength of 355 nm, the ITO film resistivity decreased by 10x to 2 × 10 -4Ωcm while its optical transmittance was > 90 %. For PET, the heating temperature was limited to o C and hence the ITO resistivity could only be decreased by a factor of 2 to 5 × 10 -4Ωcm. The thermally induced crystallization of ITO, which has a preferred <111> directional orientation texture, largely accounts for lowering of its film resistivity. The OLED was based on simple device structure of ITO/(PVK+TPD+Alq 3 )/Al, which output brightness was compared to that fabricated on the commercial ITO. Effet of an ultra-thin diamond-like carbon (DLC) layer in the OLED was investigated.