Electrical and optical properties of p-type CuFe1-xSnxO2 (x = 0.03, 0.05) delafossite-oxide

Abstract

The CuFe1-xSnxO2 (x = 0.03, 0.05) delafossite samples have been synthesized by a solid-state reaction to investigate electrical and optical properties of the transparent conducting oxide materials. Crystal structure was characterized by XRD. The electrical conductivity and Seebeck coefficient were measured in the high temperature range of 300 to 960 K, while the Hall coefficient, XPS, and UV-VIS-NIR spectra were analyzed at room temperature. The XRD peaks of the samples indicate the delafossite structure phase, and the XPS spectra reveal the stable Sn2+-doping state. The Seebeck and Hall coefficient display a positive sign indicating the p-type conducting oxide. The optical allowed direct gap is 3.45 eV as a visible-transparent material. The activation energies for polaron hopping between Sn2+ sites and Fe3+ sites of 36 and 32 meV are obtained from the samples having x = 0.03 and 0.05, respectively. The CuFe1-xSnxO2 delafossite oxide compounds, of which the Fe3+ sites in the CuFeO2 are substituted by the Sn2+ ions, are p-type transparent conducting oxide materials. The activation energy is found to decrease with an increased in Sn content.

Optical and electronic properties of delafossite CuBO2 p-type transparent conducting oxide

“…E g can be obtained from a plot of (ah ) 2 vs. h , 19 by taking the intercept on the photon energy axis to zero on the (ah ) 2 axis. E g of CuBO 2 is calculated to be 3.6 eV and corresponds well with values from reports by Scanlon et al 8 and Santra et al 10 The visible light region of the electromagnetic spectrum is 1.7-3.1 eV.…”

“…In particular, p-type transparent materials are used in touch screens, mobile phones, and smart mobile devices. TCO materials require optical direct energy gaps (Eg) of >3.1 eV, 2,3 to ensure the protecting visible light excitation of electrons from the valence to conduction bands. p-type TCO materials of Cu-based delafossite compounds have been recently investigated.…”

p‐Type Optoelectronic and Transparent Conducting Oxide Properties of Delafossite CuAl1/2Fe1/2O2

“…P ‐Type transparent conducting oxide ( p ‐TCO) materials are promising for many applications that require transparent conducting electrodes such as, liquid crystal displays organic light‐emitting diodes and solar cells. p ‐TCO materials contain direct energy gaps, Eg > 3.1 eV, to protect the electrons by using energy in the visible light range to excite them from the valence band to the conduction band . Kawazoe et al .…”

“…p-TCO materials contain direct energy gaps, Eg > 3.1 eV, to protect the electrons by using energy in the visible light range to excite them from the valence band to the conduction band. [2][3][4] Kawazoe et al 2 reported that CuAlO 2 delafossite displayed p-TCO behavior with a direct Eg of 3.5 eV. Park et al 5 reported that the electrical conductivity (r) of bulk CuAlO 2 is less than 1 S/ cm.…”

Electronic and magnetic properties of second main-group and second sub-group metals substitution for Al in delafossite CuAlO2

“…Transparent conducting oxides (TCOs) have both exclusive transparency and conductivity [1], making them extremely useful for technological and industrial applications [2], especially in optoelectronic and electronic devices [3][4][5]. Among them, most of the commercial and practical applications are n-type [6,7], whose monopolarity somewhat limits their use as oxide semiconductors [8].…”