Electrical and Optical Properties of La_1–xA_xFe_1–yB_yO_3−δ Perovskite Films (with A = Sr and Ca, and B= Co, Ga, Ti): Toward Interlayers for Optoelectronic Applications

Abstract

This paper shows that perovskite oxides can be used as p-type interfacial layers of optoelectronic devices thanks to their optical and electrical properties, morphologies, and work functions. La1–x A x Fe1–y B y O3−δ perovskite films (with A = Sr, Ca and B = Co,Ga,Ti) have been synthesized by pulsed layer deposition (PLD). The impacts of A-site and B-site cation substitutions as well as of oxygen stoichiometry in the perovskite structure on their optical and electrical properties have been studied. The oxygen stoichiometry has a large impact on the electrical conductivity and the absorption spectra of the perovskite films, enabling us to finely tune the material composition or annealing to match most of the requirements associated with their use as selective contact in optoelectronic devices. Finally, we suggest La0.8Sr0.2Fe0.7Ga0.3O3−δ and CaTi0.8Fe0.2O3−δ perovskite films as relevant candidates as p-type interlayers for third generation solar cells or organic and hybrid light-emitting devices. Using an annealing of 500 °C, CaTi0.8Fe0.2O3−δ was successfully integrated in a working perovskite light emitting diode (PeLED) based on the methylamonnium lead bromide (CH3NH3PbBr3) hybride perovskite, showing comparable performance to a reference devices based on a conventional PEDOT:PSS layer.

The electrical modulus and other dielectric properties by the impedance spectroscopy of LaCrO3and LaCr0.90Ir0.10O3perovskites

“…The perovskite oxide materials have grabbed considerable attention among scientists due to their electrical, dielectric, magnetic, thermal, mechanical, sensing and optical properties. [1][2][3][4][5][6][7] Additionally, the exibility in the chemical composition of these materials offers excellent possibilities in terms of control of their structures via substitution of a number of transition metals into the A or B cation sites. [8][9][10][11][12] Such properties make perovskite oxides very promising for several applications.…”

Toward Highly Efficient Inkjet‐Printed Perovskite Solar Cells Fully Processed Under Ambient Conditions and at Low Temperature

“…Several interfacial layers between ITO and the perovskite active layer can be used for perovskite devices . The most popular interfacial layers are TiO x and WO x .…”

The effect of precursor concentrations on the structure and optoelectronic properties of quasi low-dimensional hybrid 2-methylpyridinium lead bromide crystalline phases

“…Organometal halide perovskites are attracting ever-increasing attention from the materials research community. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] Owing to unusual electronic and non-linear optical properties including anisotropic photoconductivity, 4 thermochromism, 5,6 birefringence, 7,8 high X-ray photoresponse 9 etc., hybrid organometal halide perovskites can be used for manufacturing of solar cells, [10][11][12][13] light-emitting diodes, 14 lasers, 15,16 memristors, 17 image sensors, 18 photo-, 19,20 and X-ray detectors. 20 From a crystal structure point of view, quasi low-dimensional 0D, 1D, and 2D hybrid organometal halides represent a much broader family of compounds as compared to conventional 3D halide perovskites.…”

“…Organometal halide perovskites are attracting ever-increasing attention from the materials research community. 1–20 Owing to unusual electronic and non-linear optical properties including anisotropic photoconductivity, 4 thermochromism, 5,6 birefringence, 7,8 high X-ray photoresponse 9 etc. , hybrid organometal halide perovskites can be used for manufacturing of solar cells, 10–13 light-emitting diodes, 14 lasers, 15,16 memristors, 17 image sensors, 18 photo-, 19,20 and X-ray detectors.…”