Electrical and optical properties of fluorine-doped CdO films deposited by ultrasonic spray pyrolysis

Kul, Metin; Zor, Muhsin; Aybek, Ahmet Şenol; Irmak, Sinan; Turan, Evren

doi:10.1016/j.solmat.2007.01.020

Cited by 41 publications

(17 citation statements)

References 35 publications

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“…Another method derived from spray pyrolysis is the ultrasonic spray pyrolysis method which consists of spraying a solution on a heated substrate. The apparatus of the deposition system typically used in this work is shown in Figure 5.15 [111] . Ultrasonic spray pyrolysis involves spraying a solution on a heated substrate.…”

Section: Materials and Composite Materials Fabrication 301mentioning

confidence: 99%

“…Better conditions for good morphological and optical properties were: [Cd 2 + ], (0.1 -3) × 10 − 3 M; thiourea, (3 -5) × 10 − 3 M; buffered solution, 20 × 10 − 3 M; pH 9.0 -9.5; temperature, 85 ° C; and time, 13 -30 minutes. Signifi cantly lower precipitated particulate density was obtained using the buffered solutions under optimum conditions and the fi lms were stoichiometric, grew a strong (111) or (002) texture, and had a direct bandgap of 2.40 eV. CdS thin -fi lm photoconductivity has been determined for fi lms prepared from aqueous chemical baths containing a TEA complex of Cd 2 + ions and thiourea, mixed in different nonequimolar ratios [43,45] .…”

Section: Cds and Cdse Preparationmentioning

confidence: 99%

“…15 Ultrasonic spray pyrolysis system[111] : (1) container, (2) ultrasonic spray head, (3) fl ow meter, (4) water -ice bath for reference temperature, (5) thermocouple wire, (6) ultrasonic generator, (7) voltmeter for thermocouple, (8) iron -constantan thermocouple, (9) glass substrates, (10) heater, (11) current source, (12) nitrogen gas tank.…”

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Thin‐Film Semiconductors Deposited in Nanometric Scales by Electrochemical and Wet Chemical Methods for Photovoltaic Solar Cell Applications

Savadogo

2010

Advances in Electrochemical Sciences and Engineering

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IntroductionThe world net electricity generation has been estimated to increase 77% from 18 trillion kilowatt hour s ( kWh ) in 2006 to 31.8 trillion kWh in 2030 with a value of 23.2 trillion kWh in 2015 1) . On the other hand, the world market capacity of solar photovoltaic power systems escalated from 1.3 gigawatt s ( GW ) in 2001 to 15.2 GW in 2008 for systems which have been installed. In particular, market installations reached a record high of 5.95 GW in 2008 corresponding to a growth of 110% from 2007. The contribution of solar energy to the world net electricity generation is estimated to be 6% by 2050.The production of photovoltaic ( PV ) modules is still based mainly on crystalline silicon (Si) (94%) while 4% of modules are based on thin -fi lm amorphous Si solar cells and 2% are polycrystalline compound solar cells based on CdTe and CuIn 2 Se [1] . Despite the tremendous progress in all aspects of production of Si -based solar cells and the rapid decrease of production cost for PV modules from $5 per peak watt at the beginning of the 1990s to $2.5 per peak watt in 2009, or $0.7 per kWh, this remains effectively too high. Subsidies from some government policies and/or the carbon dioxide market to increase the utilization of clean energy for sustainable development can contribute to reduce the PV energy cost to $0.25 -0.40 per kWh during the fi rst year of the system installation. This cost is similar to that of classic energy where energy cost is higher than $0.25 -0.30 per kWh. For economic viability of this energy without subsidies, the development of ultralow -cost PV systems is one of the important issues to ensure a smooth transition to sustainable energy development. According to a recent US Department of Energy study in the USA [2] , a major research effort is needed to close the huge gap between the current use of solar energy and its enormous underdeveloped potential. One of the identifi ed thrusts of the 5 Advances in Electrochemical Science and Engineering. Edited

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Section: Materials and Composite Materials Fabrication 301mentioning

confidence: 99%

Section: Cds and Cdse Preparationmentioning

confidence: 99%

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Thin‐Film Semiconductors Deposited in Nanometric Scales by Electrochemical and Wet Chemical Methods for Photovoltaic Solar Cell Applications

Savadogo

2010

Advances in Electrochemical Sciences and Engineering

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“…Although CdO is considered a toxic material, it has been used widely in optoelectronic devices as transparent conducting oxide [15,16]. In our previous studies on pure and doped-CdO films deposited by e-beam [17][18][19], it was noted that these films have a high optical transmittance (>80%) in the visible region and a polycrystalline structure.…”

Section: Introductionmentioning

confidence: 99%

Characterization of ITO/CdO/glass thin films evaporated by electron beam technique

Hussein

Ali

2008

Science and Technology of Advanced Materials

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A thin buffer layer of cadmium oxide (CdO) was used to enhance the optical and electrical properties of indium tin oxide (ITO) films prepared by an electron-beam evaporation technique. The effects of the thickness and heat treatment of the CdO layer on the structural, optical and electrical properties of ITO films were carried out. It was found that the CdO layer with a thickness of 25 nm results in an optimum transmittance of 70% in the visible region and an optimum resistivity of 5.1 × 10 −3 cm at room temperature. The effect of heat treatment on the CdO buffer layer with a thickness of 25 nm was considered to improve the optoelectronic properties of the formed ITO films. With increasing annealing temperature, the crystallinity of ITO films seemed to improve, enhancing some physical properties, such as film transmittance and conductivity. ITO films deposited onto a CdO buffer layer heated at 450• C showed a maximum transmittance of 91% in the visible and near-infrared regions of the spectrum associated with the highest optical energy gap of 3.61 eV and electrical resistivity of 4.45 × 10 −4 cm at room temperature. Other optical parameters, such as refractive index, extinction coefficient, dielectric constant, dispersion energy, single effective oscillator energy, packing density and free carrier concentration, were also studied.

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“…Thus, the values given for the optical band gaps are related to the excitation of the electrons from the valance band to the Fermi level in the conduction band, whereas the actual band gap of the material is related to the excitation of the electrons from the top of the valence band to the bottom of the conduction band. The increase of the optical band gap energy with deposition temperature is attributed to the so-called Moss-Burstein effect (Ref 11,15,[30][31][32].…”

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Temperature-Dependent Properties of Spray-Deposited ITO Thin Films

et al. 2009

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Sprayed indium tin oxide (ITO) thin films are synthesized by mixing adequate quantities of ethanolic solutions of indium trichloride and stannic chloride at different substrate temperatures. The pyrolytic decomposition temperature affects the properties and morphology of ITO samples. X-ray diffraction results showed that the films are polycrystalline with cubic structure and exhibit preferential orientation along (222) plane. The SEM and AFM studies indicated that the surface morphology of the samples increases with substrate temperature. The typical I 500 sample is composed of cubic grains and has carrier concentration of 3.26 3 10 20 cm 23 and mobility of 9.77 cm 2 /V s. The electrical resistivity of ITO films decreased with increasing deposition temperature. The highest figure of merit of film is 4.4 3 10 23 X 21 . Optical absorption studies reveal that films are highly transparent in the visible region and band gap increases with substrate temperature owing to Moss-Burstein effect.

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Electrical and optical properties of fluorine-doped CdO films deposited by ultrasonic spray pyrolysis

Cited by 41 publications

References 35 publications

Thin‐Film Semiconductors Deposited in Nanometric Scales by Electrochemical and Wet Chemical Methods for Photovoltaic Solar Cell Applications

Thin‐Film Semiconductors Deposited in Nanometric Scales by Electrochemical and Wet Chemical Methods for Photovoltaic Solar Cell Applications

Characterization of ITO/CdO/glass thin films evaporated by electron beam technique

Temperature-Dependent Properties of Spray-Deposited ITO Thin Films

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