Electrical and optical properties of amorphous silicon carbide thin films prepared by e-beam evaporation at room temperature

Review—Silicon Carbide Thin Film Technologies: Recent Advances in Processing, Properties, and Applications: Part II. PVD and Alternative (Non-PVD and Non-CVD) Deposition Techniques

“…32,33 • a-SiC and nanocrystalline SiC (nc-SiC) phases as mechanical and optical protection coatings. 33,42 • Photovoltaics and Light Emitting Diodes (LEDs):…”

“…• a-SiC thin films as transition and/or protective layers for solar cells and LEDs. 31,33,35,37,42 • High-quality crystalline 3C-SiC (∼1 mm-thick) layers on 4°offaxis 4H-SiC substrates for solar-driven photoelectrochemical (PEC) water splitting to conver intermittent solar energy into renewable and storable chemical energy in the form of H 2 . 35 • High-Power, High-Temperature Electronics:…”

“…• a-SiC and nanocrystalline SiC (nc-SiC) phases for incorporation in optoelectronic devices operating in drastic environments such as high voltages and high temperatures. 42 • c-SiC and a-SiC thin films for inclusion in high-temperature electronics and sensors. 34,38,40 PVD SiC x is also being considered for several new applications, including:…”

“…K. Kefif et al 42 performed a detailed investigation of the transition from a-SiC:H to nc-SiC:H films grown by means of reactive RF magnetron sputtering at substrate temperatures (T s ) of 200, 250, 300, 400 and 500 °C in an Ar (10%) and H (90%) gas mixture at an RF plasma power of 250 W. The results clearly showed that film formation was controlled by interactions between H and the a-SiC matrix, with H playing a critical role in the nanocrystals' nucleation mechanism. The authors observed an abrupt structural transition from a-SiC:H to nc-SiC:H films as T s increased from 250 to 300 °C.…”