Electrical and optical properties of pulse plated CdS x Te1-x films

Murali, K. R.; Palanisamy, Thirumoorthy

doi:10.1007/s11581-010-0439-9

Cited by 7 publications

(8 citation statements)

References 15 publications

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“…Instead, a CdS x Te 1Àx ternary structure might have formed around the CdTe core, which is commonly formed upon heating processes. 40,41 It is known that the position of CdS-like LO mode shifts from 305.6 (at x = 1) to 258.7 cm À1 (at x = 0) as S content decreases in CdS x Te 1Àx compounds. 36 Using the experimentally observed wavenumbers and their corresponding CdS x Te 1Àx alloy compositions from Fischer et al, 36 a composition around CdS 0.7 Te 0.3 is estimated for all three QD samples capped with the different thiol agents.…”

Section: Resultsmentioning

confidence: 99%

Photonic Crystal Fiber for Efficient Raman Scattering of CdTe Quantum Dots in Aqueous Solution

et al. 2011

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A novel hollow-core photonic crystal fiber platform was used for the first time to observe clear vibrational modes of the CdTe core, CdS(0.7)Te(0.3) interface, and carboxylate-metal complexes in dilute aqueous CdTe quantum dot (QD) solutions. These modes demonstrate the presence of crystalline cores, defects, and surface passivation responsible for photoluminescent efficiency and stability. In addition, 3-mercaptopropionic acid (MPA)-capped QDs show higher crystallinity and stability than those capped with thioglycolic acid (TGA) and 1-thioglycerol (TG). This detailed, nondestructive characterization was carried out using Raman spectroscopy for solutions with QD concentration of 2 mg/mL, which is similar to their concentration during synthesis process. This platform can be extended to the in situ studies of any colloidal nanoparticles and aqueous solutions of relevant biological samples using Raman spectroscopy.

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Section: Resultsmentioning

confidence: 99%

Photonic Crystal Fiber for Efficient Raman Scattering of CdTe Quantum Dots in Aqueous Solution

et al. 2011

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“…It should be noted that intermixing of CdTe and CdS occurs during the chloride processing with the formation of CdS x Te 1 − x alloys [15]. This effect is strongest for thin CdS films and may be critical for solar cells with the thickness of CdS layers less than 100 nm [16].…”

Section: Sem Analysismentioning

confidence: 99%

Electrical characterization of annealed chemical-bath-deposited CdS films and their application in superstrate configuration CdTe/CdS solar cells

et al. 2015

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“…Both compounds have direct band gaps with values suitable for photovoltaic applications. In addition, the formation of a homogeneous solid solution over the entire compositional range (0 ≤ x ≤ 1), by the combination of these two compounds allow the production of very interesting ternary CdS 1-x Se x systems [2]. Such mixed compositions are of interest mainly because they allow tuning of the semiconductor properties (most commonly bandgap and, therefore, spectral sensitivity).…”

Section: Introductionmentioning

confidence: 99%

Optical and Structural Properties of Chemical Bath Deposited Cadmium Sulphur Selenide (CdS1–xSex (0 ≤ x ≤ 1)) Thin Films

Ngbiche¹,

Nkrumah²,

Ampong³

et al. 2019

OJAppS

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The tuneable band gap property of Cadmium-sulphur-selenide (CdS 1-x Se x ) thin film makes it an appropriate material for a wide range of optoelectronic applications and this has aroused a lot of interest. In this paper, we report the study of Cadmium-sulphur-selenide (CdS 1-x Se x ) thin films, successfully grown on commercial glass slide substrate by the chemical bath deposition technique. The effect of selenium content (x value) on the structural, and some optical properties have been studied. The bath solution contained cadmium acetate dehydrate [Cd(CH 3 COO) 2 ·2H 2 O], sodium selenosulphate [Na 2 SeSO 3 ] and thiourea [CS(NH 2 ) 2 ] were used as the sources of Cd 2+ , Se 2− and S 2+ , respectively. Tartaric acid (C 4 H 6 O 6 ) was used as a complexing agent. The pH of the solution was adjusted to 12 by drop-wise addition of ammonia. The bath temperature was kept at 90˚C for a deposition time of 1 hour. Post deposition annealing processes of the thin films were performed in a furnace at a temperature of 400˚C for two hours. Both as-deposited and annealed films were characterised by Powder X-Ray Diffraction, Scanning Electron Microscopy, UV-Visible Optical Absorption Spectroscopy and Energy Dispersive X-Ray Analysis. Optical absorption data analysis indicates that direct allowed transitions occur in the films. The band gap of the as-deposited CdS 1-x Se x decreased linearly from 2.34 eV to 1.48 eV, with increasing selenium content, and in the annealed samples, decreased from 1.84 eV to 1.36 eV. X-ray diffraction measurements revealed, that pure CdS, and CdSe had mixed hexagonal and cubic phases. All the remaining ternary compounds were composed of cubic CdS and hexagonal CdSe phases. The annealed samples showed well defined and more intense peaks, suggesting an improvement in crystallinity. The average grain size increased slightly with increasing selenium content. SEM micrographs showed that the films were compact with a smooth texture and good coverage across the entire area of the substrate.

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Electrical and optical properties of pulse plated CdS x Te1-x films

Cited by 7 publications

References 15 publications

Photonic Crystal Fiber for Efficient Raman Scattering of CdTe Quantum Dots in Aqueous Solution

Photonic Crystal Fiber for Efficient Raman Scattering of CdTe Quantum Dots in Aqueous Solution

Electrical characterization of annealed chemical-bath-deposited CdS films and their application in superstrate configuration CdTe/CdS solar cells

Optical and Structural Properties of Chemical Bath Deposited Cadmium Sulphur Selenide (CdS1–xSex (0 ≤ x ≤ 1)) Thin Films

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