Electrical and optical properties of MgO thin film prepared by sol-gel technique

Abstract

Abstract. MgO thin films with either (111) or (200) preferential orientation have been prepared on (100) Si substrates by sol-gel method after a heat-treatment at 800~ The obtained (111) preferentially oriented MgO film has a dielectric constant of 7.0 with a loss factor of 5% and a dielectric strength higher than 8 • 105 V/cm. The optical refractive index, which depends on the film thickness, is 1.71 when the film thickness is 260 nm. The surface structure of the Si substrate is believed to affect the preferential orientation of the sol-gel derived MgO film. Specifically, the microstructures at the interface indicate an interdiffusion of Mg, O, and Si between the film and the substrate.

Surface Morphology, Structural and Optical Properties of MgO Films Obtained by Spray Pyrolysis Technique

“…It is attracting much interest owing to its unique properties such as a high dielectric constant (≈9.8), a large band gap of 7.3-7.8 eV, and a high breakdown field of 12 MV/cm [2]. Other important properties of MgO include chemical inertness, high electrical insulation, optical transparency, high-temperature stability, and high thermal conductivity [2,3]. Such properties allow using this compound as a dielectric material to replace silicon dioxide in some applications [2].…”

“…Studies of different structural and physical properties of magnesium oxide films have been reported previously [2,3,5,11,13,14,[16][17][18][19]. But only a few studies have dealt with films obtained by the spray pyrolysis method [8,17,[20][21][22].…”

Enhancement in Dielectric Constant and Structural Properties of Sol-Gel Derived MgO Thin Film using ZnO/MgO Multilayered Structure

“…From the measured thickness, capacitor performance has been calculated using referring (1) and the values are 2.85, 2.22, 0.88, 0.75 and 0.41nF. From the value of capacitance, it can be seen that, when the film is deposited in multilayer the capacitance performance is improved.…”

“…Magnesium oxide, MgO is a best candidate to be used as dielectric layer due to its excellent properties such as has high dielectric constant (~ 9.8), large band gap in the range of 7.3 eV -7.8 eV and has higher breakdown field (12 MV/cm) compared to commonly used dielectric layer which is silicon dioxide (SiO 2 ) [1]- [3]. Due to its excellent dielectric properties, MgO has been proposed to be used for capacitor applications because MgO can improve the storage capability of a capacitor.…”

Crystal growth of MgO thin films deposited on ZnO underlayers by magnetron sputtering

“…Several kinds of deposition methods have been reported for MgO deposition; electron-beam evaporation [1][2][3][4], dc magnetron sputtering [5], rf magnetron sputtering [1,6,7], pulsed mid-frequency magnetron sputtering [8,9], metal-organic chemical vapor deposition [10,11], sol-gel deposition [12] and ion-beam-assisted deposition [13]. Among these deposition methods, electron-beam evaporation is typically used for MgO thin film deposition in PDP mass production.…”