Electrical and photoelectric properties of electrodeposited n-Si/n-Cd1 - x ZnxS heterojunctions

Abstract

n -Si/ n -Cd 1x Zn x S heterojunctions are produced by electrodepositing Cd 1x Zn x S ( 0 ≤ x ≤ 0.6 ) films on silicon substrates, and their electrical and photoelectric properties are studied. The results demonstrate that the spectral response of the heterojunctions depends strongly on the film composition and heat-treatment conditions. The highest photosensitivity is achieved at x = 0.6 by heat treatment at 350 ° C for 7 min: V OC = 0.5 V and I SC = 3.8 mA/cm 2 under illumination of 1500 lx at 300 K.

Investigation of Electrodeposited Glass/SnO2/CuInSe2/Cd1-xZnxS1-ySey/ZnO Thin Solar Cells

“…The changes in the heterojunction parameters with annealing condition are explained on the basis of the electron-molecular interaction of the film surface with oxygen. 13,14) It is supposed that oxygen adsorption after the removal of Cd 1Àx Zn x S 1Ày Se y films from the solution leads to the formation of deep acceptor states in the surface layer of the films. The oxygen-related acceptors capture electrons from the film bulk and create a near-surface potential barrier, which is responsible for the low photosensitivity of the as-deposited films.…”