Electrical and photoelectrical properties of isotype N+-GaSb/n0-GaInAsSb type II heterojunctions

Afrailov, Muhitdin

doi:10.1016/j.infrared.2003.09.001

Cited by 7 publications

(5 citation statements)

References 9 publications

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“…The current saturation at reverse bias was also observed in these structures. These type II structures can be divided to lattice matched structures, GaSb / GaInAsSb [22,23] and non matched structures GaSb / InAs [24,25]. The non lattice matched system showed weaker saturation than the lattice matched systems (including our system which is lattice matched).…”

Section: Dark Transport Mechanismmentioning

confidence: 82%

“…Optical gain is observed in both forward and reverse biases and in both material related spectral bands. Optical gain was observed in N-n type II heterostructures in other material systems [22][23][24]. It was attributed to the tunneling of optically excited holes from the narrow band gap material to the wide band gap material side of the junction [22].…”

Section: Gain Mechanismmentioning

confidence: 99%

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GaSb/InAsSb heterostructure MWIR detector for high temperature operation

Sharabani¹,

Paltiel²,

Sher³

et al. 2008

SPIE Proceedings

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InAsSb is a promising material for high operating temperature MWIR detectors. InAsSb p-n junction detectors dark current is g-r limited in the lower temperature range and diffusion limited in the higher ones. In this work we have investigated the properties GaSb / InAs 0.91 Sb 0.09 heterostructure and its performance as a sensitive MWIR photodetector. The heterostructure was obtained by MOCVD growth of lattice matched, unintentionally doped layer of InAsSb on NGaSb substrate. This rectifying N-n heterostructure has the unique type II broken gap interface. I-V and spectral response were measured at various temperatures in the range 20-300 K. The BLIP temperature was found to be 180 K. R 0 A product of 2.5 and 180 Ω·cm 2 were measured at 300 and 180 K, respectively. Dual color detection was demonstrated. The range of spectral response, due to light absorption in GaSb or in InAsSb can be determined by the applied bias. An optical gain larger than one was observed at temperatures below 120 K. High detectivity values of 1.3·10 10 and 4.9·10 9 cm·Hz 1/2 W -1 at 180 and 300 K respectively were measured.

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Section: Dark Transport Mechanismmentioning

confidence: 82%

Section: Gain Mechanismmentioning

confidence: 99%

GaSb/InAsSb heterostructure MWIR detector for high temperature operation

Sharabani¹,

Paltiel²,

Sher³

et al. 2008

SPIE Proceedings

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“…The photocurrent first decreases, reaches zero changes sign, and then its magnitude, as shown in the inset of Fig. 3, increases [9]. The gain G is obtained immediately after changing sign.…”

Section: Resultsmentioning

confidence: 83%

“…This effect was proposed to be due to a modulation of transparency of the potential barrier for electrons at the heteroboundary by the holes trapped in the potential well in the valence band. In our previous work [9], we have reported the photocurrent sign dependence on photon energy as a function of forward bias in the same structures. Now, we present a study of the illumination intensity influence to the gigantic photocurrent gain effect for applied bias voltage.…”

Section: Introductionmentioning

confidence: 97%

Photocurrent amplification in a isotype N+-GaSb/n0-GaInAsSb type II heterojunctions

Ahmetoglu

2008

Infrared Physics & Technology

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“…Both efficient light-emitting devices [1][2][3] and high-speed detectors [4,5] have been prepared and may be used for gas pollution monitoring, as well as for optical communications in the new generation of fibers. The unusual band energy diagram in type II heterojunctions results in electron and holes being localized in self-consistent quantum wells on either side of the interface [6,7]. Type II heterojunctions on the base of GaSb/Ga 1-x In x As y Sb 1-y can demonstrate two different kinds of band alignment.…”

Section: Introductionmentioning

confidence: 99%

Electrical and photoelectrical properties of isotype N ⁺ ‐GaSb/ n ⁰ ‐GaInAsSb/ N ⁺ ‐GaAlAsSb double heterojunctions

Afrailov

Özer

2005

phys. stat. sol. (c)

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The electrical and optical properties of a double type II heterojunction in the GaSb/GaInAsSb/GaAlAsSb system with staggered band alignment were studied. The dark current mechanisms in the isotype heterostructures were investigated at several temperatures. It is shown that a type II staggered hetero-junction can behave as Schottky diodes and the dark current-voltage (I-V) characteristics of this isotype heterostructures were rectifying over the whole temperature range 90-300 K. The qualitative comparison of experimental results with theory shows that, the low temperature region the tunneling mechanism of the current flow dominates in both, forward and reverse biases. A mechanism of photocurrent amplification in isotype N + -n 0 -N + heterojunctions due to hole confinement at the type II interface is observed and discussed.

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Electrical and photoelectrical properties of isotype N+-GaSb/n0-GaInAsSb type II heterojunctions

Cited by 7 publications

References 9 publications

GaSb/InAsSb heterostructure MWIR detector for high temperature operation

GaSb/InAsSb heterostructure MWIR detector for high temperature operation

Photocurrent amplification in a isotype N+-GaSb/n0-GaInAsSb type II heterojunctions

Electrical and photoelectrical properties of isotype N ⁺ ‐GaSb/ n ⁰ ‐GaInAsSb/ N ⁺ ‐GaAlAsSb double heterojunctions

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Electrical and photoelectrical properties of isotype N+-GaSb/n0-GaInAsSb type II heterojunctions

Cited by 7 publications

References 9 publications

GaSb/InAsSb heterostructure MWIR detector for high temperature operation

GaSb/InAsSb heterostructure MWIR detector for high temperature operation

Photocurrent amplification in a isotype N+-GaSb/n0-GaInAsSb type II heterojunctions

Electrical and photoelectrical properties of isotype N + ‐GaSb/ n 0 ‐GaInAsSb/ N + ‐GaAlAsSb double heterojunctions

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Electrical and photoelectrical properties of isotype N ⁺ ‐GaSb/ n ⁰ ‐GaInAsSb/ N ⁺ ‐GaAlAsSb double heterojunctions