Electrical and Physical Analysis of Thermal Degradations of AlGaN/GaN HEMT Under Radar-Type Operating Life

Temçamani, Farid; Fonder, Jean-Baptiste; Latry, Olivier; Duperrier, Cédric

doi:10.1109/tmtt.2016.2519342

Cited by 7 publications

(8 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In 2020, Liu et al [36] firstly reported the single pulse unclamped inductive switching (UIS) withstanding physics and failure mechanism for p-GaN HEMT. All evidence eliminates other failure mechanisms, leaving the inverse piezoelectric effect to be the predominant one.…”

Section: High Electric Stressmentioning

confidence: 99%

“…In 2016, Temcamani et al [37] investigated failure mechanisms of Si-based GaN HEMT RF PAs under radar operating conditions. Characterizations performed before and after ageing tests prove that gate metal contacts are very sensitive to temperatures, and the irreversible part of the ageing process at gate region is mainly due to thermal stresses.…”

Section: High Thermal Stressmentioning

confidence: 99%

“…In the same year, Zhou et al [43] studied the thermal ) rate distributions along the AlGaN/GaN interface when the V ds approaches V peak during the UIS process [36] . [37] . [38] .…”

Section: High Thermal Stressmentioning

confidence: 99%

See 2 more Smart Citations

Recent progress of physical failure analysis of GaN HEMTs

Xi¹,

Du²,

Sun³

et al. 2021

J. Semicond.

View full text Add to dashboard Cite

Gallium nitride (GaN)-based high-electron mobility transistors (HEMTs) are widely used in high power and high frequency application fields, due to the outstanding physical and chemical properties of the GaN material. However, GaN HEMTs suffer from degradations and even failures during practical applications, making physical analyses of post-failure devices extremely significant for reliability improvements and further device optimizations. In this paper, common physical characterization techniques for post failure analyses are introduced, several failure mechanisms and corresponding failure phenomena are reviewed and summarized, and finally device optimization methods are discussed.

show abstract

Section: High Electric Stressmentioning

confidence: 99%

Section: High Thermal Stressmentioning

confidence: 99%

See 1 more Smart Citation

Recent progress of physical failure analysis of GaN HEMTs

Xi¹,

Du²,

Sun³

et al. 2021

J. Semicond.

View full text Add to dashboard Cite

show abstract

“…AlGaN/GaN high-electron-mobility transistors (HEMTs) are now applied in high-power and high-frequency devices. [1] Nevertheless, in these applications they are subjected to high electrical, mechanical, and thermal stresses that can result in various levels of device degradation. The evidence of structural degradation of these devices due to high-power and hightemperature stresses was found in Refs.…”

Section: Introductionmentioning

confidence: 99%

“…AlGaN/GaN high‐electron‐mobility transistors (HEMTs) are now applied in high‐power and high‐frequency devices . Nevertheless, in these applications they are subjected to high electrical, mechanical, and thermal stresses that can result in various levels of device degradation.…”

Section: Introductionmentioning

confidence: 99%

Ir/Al multilayer Gates for High Temperature Operated AlGaN/GaN HEMTs

Lalinský

Vanko

Dobročka

et al. 2017

Physica Status Solidi (a)

View full text Add to dashboard Cite

The fabrication and characterization of the sequentially evaporated Ir/Al multilayer gates of AlGaN/GaN circular high electron mobility transistors formed by high temperature oxidation is reported. Annealing at temperature of 800 °C, for 60 s in O2 ambient makes possible to form a sharp gate interface with a high Schottky barrier height at RT (φb = 1.2 eV). It is also shown that high temperature oxidation can be an effective approach in reducing of both the gate and drain leakage currents of high electron mobility transistors (more than six orders). A comprehensive microstructural, electrical, and electro‐thermal characterization of the Ir/Al gates is carried out to study the thermal stability of the gate interface and high temperature performance of the devices. Stable operation of the devices with multilayer Ir/Al gates in the temperature range up to 500 °C is demonstrated. Here, it is proposed that the thermal stability of the interface is controlled by the formed aluminum oxide interfacial layer. Finally, perfectly clear pinch‐off characteristics and thermally induced threshold voltage (Vth) instability as low as −0.58 mV °C−1 are achieved.

show abstract

High-performance gallium nitride high-electron-mobility transistors with a thin channel and an AlN back barrier

Zhang

Dong

Chen

et al. 2023

Applied Physics Letters

View full text Add to dashboard Cite

In this work, high-performance high-electron-mobility transistors (HEMTs) with a thin GaN channel and an AlN back barrier were fabricated and investigated in detail. The AlN back barrier HEMTs possess a higher current density and a better linearity than traditional devices. In addition, the off-state leakage current of the AlN back barrier HEMTs is more than one order of magnitude lower than that of traditional devices with a high-resistance Fe-doped GaN buffer, even though they do not involve any intentional doping technique. Additionally, the high-temperature performance of the AlN back barrier HEMTs is excellent, with less attenuation in the drain current density and less increase in the off-state leakage current. Moreover, the breakdown voltage of the AlN back barrier HEMTs is as high as 309 V with an LGD of 2.5 μm, resulting in a high Baliga figure of merit of 0.354 GW/cm2. The superior performance of the AlN back barrier devices is further demonstrated by the calculation and simulation results. The results in this work not only show the great potential of AlN back barrier HEMTs but also provide a useful direction for overcoming the limiting issues of nitride devices.

show abstract

Electrical and Physical Analysis of Thermal Degradations of AlGaN/GaN HEMT Under Radar-Type Operating Life

Cited by 7 publications

References 25 publications

Recent progress of physical failure analysis of GaN HEMTs

Recent progress of physical failure analysis of GaN HEMTs

Ir/Al multilayer Gates for High Temperature Operated AlGaN/GaN HEMTs

High-performance gallium nitride high-electron-mobility transistors with a thin channel and an AlN back barrier

Contact Info

Product

Resources

About