Electrical and Reliability Perspectives for Self-Forming Barrier CuSc Metallization

Cheng, Yi-Lung; Peng, Wei-Fan; Lee, Chih-Yen; Chen, Giin-Shan; Lin, Yi; Fang, Jau–Shiung

doi:10.1149/2162-8777/ac0a41

Cited by 2 publications

(1 citation statement)

References 23 publications

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“…The k value of the SiO 2 film in the annealed CoW-gate MIS capacitors was reduced to 4.12 ± 0.17, which is similar to the theoretical value of thermally grown SiO 2 films. This result suggests that most of sputtering-deposition-induced damage was repaired by thermal annealing, similar to the results of our previous study [ 22 ]. For the CoB-gate MIS capacitors, the k value of the SiO 2 film was reduced to 4.72 ± 0.22 by thermal annealing, but it was still higher than the theoretical value.…”

Section: Resultssupporting

confidence: 91%

Comparison of CoW/SiO2 and CoB/SiO2 Interconnects from the Perspective of Electrical and Reliability Characteristics

et al. 2023

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As the feature size of integrated circuits has been scaled down to 10 nm, the rapid increase in the electrical resistance of copper (Cu) metallization has become a critical issue. To alleviate the resistance increases of Cu lines, co-sputtered CoW and CoB alloying metals were investigated as conductors and barriers in this study. Annealing CoM (M = W or B)/SiO2/p-Si structures reduced the resistivity of CoM alloys, removed sputtering-deposition-induced damage, and promoted adhesion. Additionally, both annealed CoW/SiO2 or CoB/SiO2 structures displayed a negligible Vfb shift from capacitance-voltage measurements under electrical stress, revealing an effective barrier capacity, which is attributed to the formation of MOx layers at the CoM/SiO2 interface. Based on the thermodynamics, the B2O3 layer tends to form more easily than the WOx layer. Hence, the annealed CoB/SiO2/p-Si MIS capacitor had a higher capacitance and a larger breakdown strength did than the annealed CoW/SiO2/p-Si MIS capacitor.

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Section: Resultssupporting

confidence: 91%