In this communication, preliminary structural and detailed electrical characteristics of the CaSnO3/CaSeO3 modified Bi0.5Na0.5TiO3 ceramics of a general chemical composition (1-2x) [Bi0.5Na0.5TiO3] + x (CaSnO3) + x (CaSeO3) with x= 0, 0.05, 0.10, 0.15, prepared by hightemperature solid-state reaction method with calcination and sintering temperature 925 o C and 950 o C respectively for 5 h, have been reported. Structural and electrical characteristics of the parent compound have significantly been tailored by the addition of the equal percentage of CaSnO3, CaSeO3 over a wide range of temperature (25 o C -400 o C) as well as frequency (1 kHz-1MHz). Analysis of room temperature X-ray diffraction (XRD) data confirmed the development of single-phase compound (with rhombohedral symmetry) with very small amount of impurity phase with higher concentrations (x). In the dielectric spectroscopy, two dielectric peaks are observed at around temperatures 210 o C and 320 o C indicating multiple phase transitions of different types including the ferroelectric to para-electric through anti-ferroelectric. Impedance analysis of data exhibits both negative/positive temperature coefficient of temperature (i.e., semiconductor behavior) of the materials. The Nyquist plots determine the grain and grain boundary effect in capacitive and resistive properties of the materials, and also the non-Debye type of relaxation. The room temperature hysteresis loop confirms the existence of ferroelectricity in the materials. The leakage current characteristics also determine the Ohmic behavior of the materials.