2021
DOI: 10.1007/s13204-021-01698-7
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Electrical and sensory properties of silicon–graphene nanosystems

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Cited by 11 publications
(6 citation statements)
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“…If we look at the parameters of the low-frequency part of the impedance spectrum CPE dl and R ct , we can see that the change in capacitance is within 55%, and the change in resistance is within 33%, respectively (Table 3). The largest change in the capacity of the CPE dl is observed with the addition of 3% silica nanoparticles, due to an increase in concentration of free charge carriers provided by added nanoparticles [28]. Also, as a result of the presence of silica nanoparticles, the resistance (R ct ) decreases due to the appearance of additional conductive contacts.…”
Section: Resultsmentioning
confidence: 99%
“…If we look at the parameters of the low-frequency part of the impedance spectrum CPE dl and R ct , we can see that the change in capacitance is within 55%, and the change in resistance is within 33%, respectively (Table 3). The largest change in the capacity of the CPE dl is observed with the addition of 3% silica nanoparticles, due to an increase in concentration of free charge carriers provided by added nanoparticles [28]. Also, as a result of the presence of silica nanoparticles, the resistance (R ct ) decreases due to the appearance of additional conductive contacts.…”
Section: Resultsmentioning
confidence: 99%
“…Hybrid silicon nanocrystals (nc‐Si)−reduced graphene oxide (RGO) nanosystems are suggested as sensitive elements to the creation of an ammonia sensor by joint Ukrainian‐Poland team [13] . Such structures were obtained by the electrochemical etching of the porous silicon and mixing separated nanostructures from silicon substrate with graphene nanosheets.…”
Section: State Of the Artmentioning
confidence: 99%
“…Hybrid silicon nanocrystals (nc-Si)À reduced graphene oxide (RGO) nanosystems are suggested as sensitive elements to the creation of an ammonia sensor by joint Ukrainian-Poland team. [13] Such structures were obtained by the electrochemical etching of the porous silicon and mixing separated nanostructures from silicon substrate with graphene nanosheets. The transport of charge carriers in the nc-SiÀ RGO nanosystem showed that an increase in the RGO content leads to decreasing the electrical resistance and increasing the capacity of the obtained nanomaterial.…”
Section: State Of the Artmentioning
confidence: 99%
“…У режимі змінного струму провідність кремнієвих і карбонових наноструктур та ефективність електричного контакту між ними визначають резистивну складову імпедансу, а перенесення заряду через границі між наночастинками формує механізм ємнісної складової повного опору чутливих елементів на основі por-Si-rGO. Зазначені особливості перенесення заряду у таких наносистемах зумовлюють різну дисперсію електричних характеристик у різних частотних діапазонах [28].…”
Section: рис 2 сем-зображення поверхні сенсорної плівки Por-si-rgounclassified
“…Більш того, змінюючи пропорцію компонентів наносистеми por-Si: rGO можна налаштувати максимальну чутливість, а значить і селективність, сенсорного елемента до певного типу газів. Зокрема у діапазоні низьких концентрацій (до 2,5%) такий підхід забезпечує різну чутливість сенсора до молекул етанолу та аміаку [28].…”
Section: рис 2 сем-зображення поверхні сенсорної плівки Por-si-rgounclassified