Electrical and spectroscopic studies of space-charged buildup, energy relaxation and magnetically enhanced bistability in resonant-tunneling structures

Eaves, L.; Leadbeater, M.; Hayes, D.G.; Alves, E.S.; Sheard, F. W.; Toombs, G. A.; Simmonds, P.E.; Skolnick, M. S.; Henini, M.; Hughes, O. H.

doi:10.1016/0038-1101(89)90197-4

Cited by 63 publications

(25 citation statements)

References 19 publications

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“…This type of behaviour has been investigated in conventional III–V heterostructure devices in which carriers tunnel resonantly through a barrier sandwiched between two confining quantum wells, so-called ‘2D-to-2D tunnelling’3031.…”

Section: Resultsmentioning

confidence: 99%

Resonant tunnelling and negative differential conductance in graphene transistors

et al. 2013

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The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. The resonance occurs when the electronic spectra of the two electrodes are aligned. The resulting negative differential conductance in the device characteristics persists up to room temperature and is gate voltage-tuneable due to graphene’s unique Dirac-like spectrum. Although conventional resonant tunnelling devices comprising a quantum well sandwiched between two tunnel barriers are tens of nanometres thick, the tunnelling carriers in our devices cross only a few atomic layers, offering the prospect of ultra-fast transit times. This feature, combined with the multi-valued form of the device characteristics, has potential for applications in high-frequency and logic devices.

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Section: Resultsmentioning

confidence: 99%

Resonant tunnelling and negative differential conductance in graphene transistors

et al. 2013

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“…19 The current noise is a fluctuation in classical stochastic processes. It is measured in the relatively high temperature reservoirs of the leads, well away from the well state, and the strong, fast electron-electron interactions in the reservoir establish the classical level of the observed variable.…”

Section: Hϭmentioning

confidence: 99%

Quantum open-systems approach to current noise in resonant tunneling junctions

Sun

Milburn

1999

Phys. Rev. B

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A quantum Markovian master equation is derived to describe the current noise in resonant tunneling devices. This equation includes both incoherent and coherent quantum tunneling processes. We show how to obtain the population master equation by adiabatic elimination of quantum coherences in the presence of elastic scattering. We calculate the noise spectrum for a double well device and predict subshot noise statistics for strong tunneling between the wells. The method is an alternative to Green's function methods and population master equations for very small coherently coupled quantum dots. ͓S0163-1829͑99͒01916-5͔

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“…[38][39][40][41] Recently it has been predicted that, in heterostructures containing paramagnetic DMS wells, this kind of phenomena can be controlled by an external magnetic field. [42][43][44] Using an incoherent, sequential tunneling model we have proposed that ferromagnetic multiwell structures can generate ac spin currents, a phenomenon which originates from the time-dependent inversion of the spin population in adjacent wells.…”

Section: Introductionmentioning

confidence: 99%

Electrical control of ferromagnetism and bias anomaly in Mn-doped semiconductor heterostructures

Ertler

Pötz

2011

Phys. Rev. B

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The interplay of tunneling transport and carrier-mediated ferromagnetism in narrow semiconductor multiquantum well structures containing layers of GaMnAs is investigated within a self-consistent Green's function approach, accounting for disorder in the Mn-doped regions and unwanted spin flips at heterointerfaces on phenomenological ground. We find that the magnetization in GaMnAs layers can be controlled by an external electric bias. The underlying mechanism is identified as spin-selective hole tunneling in and out of the Mn-doped quantum wells, whereby the applied bias determines both hole population and spin polarization in these layers. In particular, we predict that, near resonance, ferromagnetic order in the Mn-doped quantum wells is destroyed. The interplay of both magnetic and transport properties combined with structural design potentially leads to several interrelated physical phenomena, such as dynamic spin filtering, tunneling-induced bias anomaly, electrical control of magnetization in individual magnetic layers, and, under specific bias conditions, to self-sustained current and magnetization oscillations (magnetic multistability). Relevance to recent experimental results is discussed.

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Electrical and spectroscopic studies of space-charged buildup, energy relaxation and magnetically enhanced bistability in resonant-tunneling structures

Cited by 63 publications

References 19 publications

Resonant tunnelling and negative differential conductance in graphene transistors

Resonant tunnelling and negative differential conductance in graphene transistors

Quantum open-systems approach to current noise in resonant tunneling junctions

Electrical control of ferromagnetism and bias anomaly in Mn-doped semiconductor heterostructures

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