Electrical and structural characteristics of Ge-doped GaN thin films and its hetero-junction diode made all by RF reactive sputtering

The Effect of RF Sputtering Conditions on the Physical Characteristics of Deposited GeGaN Thin Film

“…The electrical properties of Ge 0.07 GaN films deposited at different temperatures in the range of 100-400 • C and the 120 W of RF power were investigated by the Hall measurement system. In previous experiments, we reported that the 300 • C-sputtered Ge 0.07 GaN film achieved an electron concentration of 5.02 × 10 17 cm -3 , mobility of 10. as an n-semiconductor layer [16]. From data displayed in Table 4 and Figure 3a, all sputtered Ge 0.07 GaN films at different growth temperatures from 100 to 400 • C remained n-type semiconductors.…”

“…The practical electrical properties of these Ge 0.07 GaN films illustrated that there were effects of heating substrate temperatures on film properties. and worked as an n-semiconductor layer [16]. From data displayed in Table 4 and Figure 3a, all sputtered Ge0.07GaN films at different growth temperatures from 100 to 400 °C remained n-type semiconductors.…”

“…The distance between the target and substrates in the working chamber for depositing was kept at 5 cm, while the substrate faced the target. Details for preparing a single ceramic target and RF reactive sputtering process were presented in the previous experiment in our laboratory [16,[18][19][20][21].…”

“…Figure 2a presented the XRD pattern and slow scan rate spectra of the Ge 0.07 GaN films grown by RF sputtering at a different heating temperature in the range of 100-400 • C and at 120 W of RF power under the mixing of Ar/N 2 input gases. From the surveyed XRD, all Ge 0.07 GaN films deposited on Si (100) substrates at temperature 100-400 • C were polycrystalline including structural wurtzite, and Ge constituted the solid-state solution in the GaN crystal structure [16]. It could be clearly seen that these Ge 0.07 GaN films with a preferential (1010) growth plane had (1010), (1011), (1120) and (1122) peaks, and other secondary phases could not be found.…”

“…To investigate the influences of dopant on the semiconductor behaviors, in our previous experiment, we reported Ge-doped GaN film deposited by a radio frequency (RF) reactive sputtering technique with a single ceramic target at the different Ge contents of the dopant of 0, 0.03, 0.07 and 1. It was presented that all these Ge-doped GaN thin films acted in as an n-type semiconductor for the various Ge dopant ratios [16]. Besides, there were many previous works that studied the effects of different sputtering conditions on the doping GaN films [5,17,18].…”