Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation

Qu, Yongfeng; Deng, Ningkang; Yuan, Yuan; Hu, Wenbo; Liu, Hongxia; Wu, Shengli; Wang, Hong-Xing

doi:10.3390/ma15113818

Cited by 8 publications

(2 citation statements)

References 25 publications

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“…The mentioned shift is caused by the temperature increase due to Joule self-heating and the mechanical strain increase in the AlGaN/GaN heterostructure. [32][33][34] The temperature data points obtained using the µ-PL method are plotted in Figure 2a as red dots. CVC and µ-PL points show a good correlation, proving the idea that the calibration curve considers the increasing strain influence.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

Thermometry of AlGaN/GaN 2D Channels at High Electric Fields Using Electrical and Optical Methods

Vitusevich

Nasieka

Наумов

et al. 2023

Adv Elect Materials

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The active channels in AlGaN/GaN‐based heterostructures are studied under different applied electrical fields to identify the Joule heating factors affecting the temperature values in the channels. The temperature in active channels of two different lengths (30 and 180 µm) is characterized using optical methods, and electrical methods are used as a reference. The technique of optical thermometry is based on the data of micro‐photoluminescence and micro‐Raman experiments. The electrical method is based on the measurements of current–voltage characteristics for comparison. It is shown that photoluminescence‐ and electrical‐based temperature values demonstrate similar behavior and good correlation. The Raman‐based method, exploiting the temperature dependence of the frequency position of E2high vibrational band in GaN, shows a significant deviation compared with electrical‐ and luminescence‐based methods. This deviation is shown to be related to the residual mechanical strain in the layered structure and the formation of hot phonons. The influence of hot phonons and mechanical strain effects increases at high electrical load (>5 kV cm−1) and at high temperatures (>400 °C), respectively.

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Section: Wwwadvelectronicmatdementioning

confidence: 99%

Thermometry of AlGaN/GaN 2D Channels at High Electric Fields Using Electrical and Optical Methods

Vitusevich

Nasieka

Наумов

et al. 2023

Adv Elect Materials

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“…For high-speed microwave and radar applications, dual material double channel AlGaN/GaN HEMT was explored, enhancing drain current by approximately 0.5 A mm −1 to 1.06 A mm −1 with an increasing gate bias V GS [20]. Yongfeng Qu introduced AlGaN/GaN HEMT with a dual metal gate structure, 10% higher I D and transconductance (g m ) than a single gate AlGaN/GaN HEMT architecture [21] were achieved [22]. In several papers, dual metal gate concept has been introduced in MISHEMTs for improvement in current, g m , and f T , and f Max .…”

Section: Introductionmentioning

confidence: 99%

Sensitivity improvement in gate engineered technique dielectric modulated GaN MOSHEMT with InGaN notch for label-free biosensing

Mishra,

Mohankumar,

Singh

2024

Eng. Res. Express

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This paper focuses on the impact of gate-engineered dielectric-modulated GaN MOSHEMT with InGaN notch on sensitivity enhancement for label-free biosensing. The novelty of this study utilizes the charge-plasma effect induced by the dual metal gate (DMG) technology adopted to realize the effect of sensitivity on different biomolecules. Moreover, the presence of an InGaN notch enhances carrier confinement in the 2DEG, subsequently improving the threshold voltage and device sensitivity at the AlGaN/GaN interface. The maximum drain current, IDS of 4.602 A/mm, transconductance, gm of 18 mS/mm, and sensitivity has been improved by around 61% for the Uricase biomolecule by introducing the dual metal gate technology. The work function difference of the two metal gates suppresses the Short Channel Effects (SCEs) and hot carrier effects in DMG MOSHEMT, thereby screening the drain potential variations by the gate near the drain. In addition, increased carrier transport efficiency results from a more consistent electric field along the channel. All the simulations are carried out using the Sentaurus TCAD simulator, and the results imply the feasibility of gate-engineered GaN MOSHEMT for label-free biosensing.

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Optimizing electrical and thermal performance in AlGaN/GaN HEMT devices using dual‐metal gate technology

Iype,

Babu,

Paul

2024

Heat Trans

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The investigation of aluminum gallium nitride/gallium nitride high electron mobility transistor (AlGaN/GaN HEMT) devices with a dual‐metal gate (DMG) structure encompasses both electrical and thermal characteristics. As efforts to enhance heat dissipation progress, there is a concurrent exploration of novel semiconductor materials boasting high thermal conductivity, like boron arsenide and phosphide. Combining these materials into a model and measuring their interface achieves efficient energy transport. Minimizing the self‐heating impact in AlGaN/GaN HEMTs is essential for enhancing device efficiency. This research exposes the heterogenous combination of boron arsenide and phosphide cooling substrates with metals, GaN semiconductors and HEMT. In this research, the autoencoder deep neural network techniques in GaN HEMT for self‐heat reduction is driven by the ability to effectively analyze and model the thermal behavior of the device. Autoencoders learn complex relationships within temperature data and identify patterns associated with self‐heating. By leveraging these learned representations, the deep neural network optimizes control strategies to mitigate self‐heating effects in GaN HEMT devices, ultimately contributing to improved thermal management and enhanced overall performance. In this research, the use of genetic algorithms in GaN HEMT aims to optimize device parameters systematically, to minimize self‐heating effects and enhance overall thermal performance. The structure also enhances electron mobility within the channel. Results show DMG structures, exhibiting higher saturation output currents and transconductance despite self‐heating. The DMG exhibits a maximum gm value of 0.164 S/mm, which is 10% higher significantly enhancing GaN‐based HEMTs for improved reliability and efficiency in various applications.

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Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation

Cited by 8 publications

References 25 publications

Thermometry of AlGaN/GaN 2D Channels at High Electric Fields Using Electrical and Optical Methods

Thermometry of AlGaN/GaN 2D Channels at High Electric Fields Using Electrical and Optical Methods

Sensitivity improvement in gate engineered technique dielectric modulated GaN MOSHEMT with InGaN notch for label-free biosensing

Optimizing electrical and thermal performance in AlGaN/GaN HEMT devices using dual‐metal gate technology

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