Electrical and thermal properties of SiC–AlN ceramics without sintering additives

Kim, Kwang Joo; Kim, Young‐Wook; Lim, Kwang-Young; Nishimura, Toshiyuki; Narimatsu, Eiichirou

doi:10.1016/j.jeurceramsoc.2015.04.010

Cited by 50 publications

(18 citation statements)

References 44 publications

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“…So far, most previous researches on pressureless, liquid‐phase sintering of SiC ceramics (LPS‐SiC) has focused on the Al 2 O 3 – Y 2 O 3 additive system, although a variety of other additive compositions have been investigated for sintering SiC using applied pressure. The additive compositions investigated for hot‐pressed, spark plasma sintered, or gas‐pressure sintered SiC ceramics include AlN, Al 2 O 3 –RE 2 O 3 (RE = La, Nd, Y, and Yb), AlN–RE 2 O 3 (RE = Sc, Lu, Yb, Er, and Y), Y 2 O 3 – RE 2 O 3 (RE = Sc, La, and Nd), Y 2 O 3 ‐nitrides, Al 2 O 3 – Y 2 O 3 – AlN, and RE‐nitrate (RE = Sc, Lu, Dy, Tb, Gd, Eu, Sm, Nd, Ce, and La) …”

Section: Introductionmentioning

confidence: 99%

Mechanical and Thermal Properties of Pressureless Sintered Silicon Carbide Ceramics with Alumina–Yttria–Calcia

2016

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The effect of sintering temperature on the mechanical and thermal properties of SiC ceramics sintered with Al 2 O 3 -Y 2 O 3 -CaO without applied pressure was investigated. SiC ceramics containing A 2 O 3 -Y 2 O 3 -CaO as sintering additives can be sintered to >97% theoretical density at temperatures between 1750°C and 1900°C without applied pressure. A toughened microstructure, consisting of relatively large elongated grains and relatively small equiaxed grains, has been obtained when sintered at temperatures as low as 1800°C for 2 h in an argon atmosphere without applied pressure. The achievement of toughened microstructures under such mild conditions is the result of the additive composition. The thermal conductivity of the SiC ceramics increased with increasing sintering temperature because of the decrease in the lattice oxygen content of the SiC grains. Typical sintered density, flexural strength, fracture toughness, hardness, and thermal conductivity of the 1850°C-sintered SiC, which consisted of 62.2% 4H, 35.7% 6H, and 2.1% 3C, were 99.0%, 628 MPa, 5.3 MPaÁm 1/2 , 29.1 GPa, and 80 WÁ(mÁK) -1 , respectively.

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Section: Introductionmentioning

confidence: 99%

Mechanical and Thermal Properties of Pressureless Sintered Silicon Carbide Ceramics with Alumina–Yttria–Calcia

2016

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“…A segunda linha de pesquisa é caracterizada pela preparação de compósitos tanto cerâmicos [6,57,112,[127][128][129] como poliméricos [87,130]. Em relação aos compósitos cerâmicos, observaram-se várias justificativas de estudos, tais como: i) compósitos AlN-BN, cujo objetivo é facilitar a usinagem do AlN por meio da adição de BN -usinagem de componentes com geometria complexa [112]; ii) compósitos AlN-TiN, cujo objetivo é montar módulos multicamadas em cerâmica para que o dispositivo eletrônico possa trabalhar acima de 500 ºC [6]; iii) compósitos AlN-SiC, cujo objetivo é possibilitar a manipulação (tailoring) de propriedades elétricas e térmicas, para combinar as melhores propriedades de cada um dos referidos materiais [127]; iv) compósitos AlN-grafeno, cujo objetivo é aumentar a condutividade elétrica e resistência mecânica usando grafeno como material para preenchimento (filler) [128]; e v) compósitos AlNvidro, cujo objetivo é produzir substratos cerâmicos pela tecnologia de cerâmica cossinterizada a baixa temperatura (low temperature cofired ceramic, LTCC) [129].…”

Section: úLtimas Tendências Em Pesquisa De Nitreto De Alumíniounclassified

Processamento, propriedades e aplicações das cerâmicas de nitreto de alumínio

Molisani

2017

Cerâmica

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INTRODUÇÃOA tecnologia planar em silício possibilitou a fabricação de dispositivos eletrônicos miniaturizados (circuitos integrados ou chips). Este processo avançou até atingir dimensões que resultaram em problemas tanto de flexibilização funcional como de custos efetivos, que inviabilizaram a produção de chips com alta complexidade. Os referidos problemas foram solucionados com o advento da tecnologia de circuitos passivos, que é responsável pela fabricação de substratos e componentes para encapsulamento (packaging), os quais são acoplados ao chip de silício para fornecer interconexão,

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“…Its electrical properties have been successfully manipulated by doping with a particulate phase containing N‐derived donors and/or Al‐ or B‐derived acceptors. Entrapment of charge carriers by deep acceptors such as Al and B led to very high electrical resistivities of 1.03 × 10 12 and 1.1 × 10 10 Ω·cm for SiC–10 wt% BN and SiC–35 vol% AlN, respectively. The addition of metal nitrides could successfully enhance the electrical conductivity by acting as an N‐doping source.…”

Section: Introductionmentioning

confidence: 99%

Mechanical properties of silicon carbide—in situ zirconium carbonitride composites

Malik

Jang

Kim

et al. 2019

Int J Applied Ceramic Tech

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SiC-Zr 2 CN composites were fabricated by conventional hot pressing from β-SiC and ZrN powders with 2 vol% equimolar Y 2 O 3 -Sc 2 O 3 as a sintering additive. The effects of the ZrN addition on the room-temperature (RT) mechanical properties and hightemperature flexural strength of the SiC-Zr 2 CN composites were investigated. The fracture toughness gradually increased from 4.2 ± 0.3 MPa·m 1/2 for monolithic SiC to 6.3 ± 0.2 MPa·m 1/2 for a SiC-20 vol% ZrN composite, whereas the RT flexural strength (546 ± 32 MPa for the monolithic SiC) reached its maximum of 644 ± 87 MPa for the SiC-10 vol% ZrN composite. The monolithic SiC had improved strength at 1200°C, whereas the SiC-Zr 2 CN composites could not retain their RT strengths at 1200°C. The typical flexural strength values of the SiC-0, 10, and 20 vol% ZrN composites at 1200°C were 650 ± 53, 448 ± 31, and 386 ± 19 MPa, whereas their RT strength values were 546 ± 32, 644 ± 87, and 528 ± 117 MPa, respectively. K E Y W O R D S hot pressing, mechanical properties, SiC-Zr 2 CN composites, silicon carbide, strength

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Electrical and thermal properties of SiC–AlN ceramics without sintering additives

Cited by 50 publications

References 44 publications

Mechanical and Thermal Properties of Pressureless Sintered Silicon Carbide Ceramics with Alumina–Yttria–Calcia

Mechanical and Thermal Properties of Pressureless Sintered Silicon Carbide Ceramics with Alumina–Yttria–Calcia

Processamento, propriedades e aplicações das cerâmicas de nitreto de alumínio

Mechanical properties of silicon carbide—in situ zirconium carbonitride composites

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