We examined the electrical transport properties of densified LaOBiS2-xSex, which constitutes a new family of thermoelectric materials. The power factor increased with increasing concentration of Se, i.e., Se substitution led to an enhanced electrical conductivity, without suppression of the Seebeck coefficient. Hall measurements indicated that the low electrical resistivity resulted from increases in the carrier mobility, and the decrease in carrier concentration led to large absolute values of the Seebeck coefficient of the system. (at ~650 K) for LaOBiSSe [5]. In contrast to the typically observed trend, the electrical resistivity of LaOBiS2-xSex was suppressed and the absolute value of the Seebeck coefficient was increased by Se substitution [2]. We therefore sought to clarify the electronic origins of the Se-substitution-induced enhancement of the power factor (PF = S 2 /) of LaOBiS2-xSex; this was done by determining the electrical resistivity (), Seebeck coefficient (S), carrier concentration (n), and mobility () of the system. Polycrystalline samples of LaOBiS2-xSex (x = 0, 0.4, 0.6, 0.8, and 1) were prepared using the solid-state-reaction method described in Ref. 2. The samples were densified by hot-pressing (HP) under a uniaxial pressure of 50 MPa. The resulting LaOBiS2-xSex powders were sealed in a 15-mm-diameter graphite capsule during HP annealing. The powders were annealed for 1 h at 700 ºC and 800 ºC for x = 0.4-1 and x = 0, respectively. This annealing