2016
DOI: 10.1063/1.4953439
|View full text |Cite
|
Sign up to set email alerts
|

Electrical and thermal transports of binary copper sulfides CuxS with x from 1.8 to 1.96

Abstract: In this study, a series of copper sulfides CuxS with x spanning from 1.8 to 1.96 was prepared and their crystal structures, elemental valence states, and thermoelectric properties were systematically studied. The valence state of Cu in CuxS is unchanged as the ratio of Cu/S varies, while the thermoelectric properties are very sensitive to the deficiency of Cu. In addition, the type of sulfur arrangement in the crystal structure also plays an important role on the electrical transports. Finally, the optimum Cu/… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

5
37
0
1

Year Published

2017
2017
2023
2023

Publication Types

Select...
8

Relationship

2
6

Authors

Journals

citations
Cited by 64 publications
(43 citation statements)
references
References 31 publications
5
37
0
1
Order By: Relevance
“…When the copper vacancy level reaches 0.15 (y = 0.15), only the cubic phase is observed in the XRD patterns without any other secondary phases. Such phase evolution induced by the change of copper-deficiency is also observed for Cu2-ySe and Cu2-yS [35,36].…”
Section: Resultssupporting
confidence: 61%
“…When the copper vacancy level reaches 0.15 (y = 0.15), only the cubic phase is observed in the XRD patterns without any other secondary phases. Such phase evolution induced by the change of copper-deficiency is also observed for Cu2-ySe and Cu2-yS [35,36].…”
Section: Resultssupporting
confidence: 61%
“…S2b). These binding energies (BEs) are consistent with those previously reported for Cu and S in Cu 2 S3334, confirming the chemical composition of Cu 2 S.…”
Section: Discussionsupporting
confidence: 91%
“…VECs engineering, especially Cu‐vacancy engineering, is the most widely studied n H ‐engineering strategy for Cu 2 X‐based thermoelectric materials . In p‐type A a B b semiconductors with holes are the main carriers, VECs for holes (as an indicator for the change of carriers) can be defined as VECs (AaBb) = b ⋅[8 − VECs (B) ] − a ⋅VECs (A) , where VECs (A) and VECs (B) are VECs of cations and anions.…”
Section: Strategies For the Thermoelectric Property Enhancementmentioning
confidence: 99%