2002
DOI: 10.1134/1.1500462
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Electrical and thermoelectric properties of p-Ag2Te

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Cited by 12 publications
(21 citation statements)
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“…3, at T ≤ 40 K hole mobility U p depends on temperature quite little while electron mobility U n goes up with temperature in accordance with the law: U n ∼ T 1.5 . Such behavior of the mobilities demonstrates that at low temperatures charge carriers scatter on ionized impurities [1,2], above T > 40 K the scattering takes place on acoustic vibrations of lattice thanks to which σ(T ) decreases in our opinion. The depth of minimum σ(T ) which is observed during experiments may be related to an abrupt decrease in U n in the 50 ÷ 65 K temperature range.…”
Section: Resultsmentioning
confidence: 95%
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“…3, at T ≤ 40 K hole mobility U p depends on temperature quite little while electron mobility U n goes up with temperature in accordance with the law: U n ∼ T 1.5 . Such behavior of the mobilities demonstrates that at low temperatures charge carriers scatter on ionized impurities [1,2], above T > 40 K the scattering takes place on acoustic vibrations of lattice thanks to which σ(T ) decreases in our opinion. The depth of minimum σ(T ) which is observed during experiments may be related to an abrupt decrease in U n in the 50 ÷ 65 K temperature range.…”
Section: Resultsmentioning
confidence: 95%
“…4). Calculations have demonstrated that at T < 65 K the Fermi energy [2] is somewhat smaller than energy of acceptor basic state ∆E a and due to this electron concentration at the acceptor level n a (where n a = N a [1+ 1 2 exp − Ea+µ…”
Section: Resultsmentioning
confidence: 99%
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“…In the case of two types of charge carriers R and σ in weak magnetic fields are determined by the following expressions [10]:…”
Section: Resultsmentioning
confidence: 99%
“…Such substitution leads to a substantial changes of charge carriers concentration and hence the electrical and thermoelectrical properties of the material. The implementation of the technological methods allow to reduce the hole concentration up to 10 18 cm −3 , i.e., it is possible to control electric and thermoelectric properties of the material by controlling the process of substitution of indium atoms by ytterbium ones. Studies of electrical, thermal and thermoelectric properties of TlIn 1−x Yb x Te 2 solid solutions show that these materials may successfully be used in many energy convertors operating at high temperatures in the infrared (IR) range.…”
Section: Introductionmentioning
confidence: 99%