Electrical and thermoelectrical properties of SnTe-based films and superlattices

Abstract

SnTe-based films and superlattices (SLs) were prepared and their electrical properties were measured. A EuTe/SnTe SL exhibited a hole mobility of 2720 cm2/V s, which is the highest value reported for any semiconductor material at room temperature. The SnEuTe film also exhibited high hole mobility in contrast to the PbEuTe system. These properties are explained in terms of the band offsets of EuTe/SnTe heterojunction and a decrease in the number of Sn vacancies. In addition, SnTe/PbSe and SnTe/PbS SLs with thin SnTe layers displayed n-type conduction with Seebeck coefficients comparable to those for PbSe and PbS. These properties reflect the type II heterostructures.

Topological Insulator Materials

“…189) In particular, a two-step method in which the depositions of the first layer and subsequent layers are done at different temperatures, to promote initial adhesion and crystallization separately, has been reported to yield best quality films. 173,182,183,188,189) For the TCI material SnTe, a technique called hot-wall epitaxy has been used in the past, 196) yielding good quality samples with a reasonably high mobility ($2700 cm 2 V À1 s À1 ). For SnTe which is a cubic material with rock-salt structure, good lattice matching is crucial for epitaxial growth.…”

Half-metallicity, magnetism and electrical resistivity of Sn1−xMnxTe alloys in rock salt and zinc blende structures

“…In recent years SnTe thin films doped with Mn have received some attention from experimentalists interested in studying the possibility of ferromagnetic/antiferromagnetic order or spin-glass phase in these materials, and anomalous Hall effect [1][2][3][4][5]. Recently SnTe-based superlattices were found to show a hole mobility of 2720 cm 2 /V s, which is among the highest values for any semiconductor material at room temperature reported so far [6].…”

Experimental Observation of Dirac-like Surface States and Topological Phase Transition inPb1−xSnxTe(111)Yan1, Liu2, Zang3 et al. 2014Phys. Rev. Lett.1197860View full textAdd to dashboardCite

“…2(a) intersects the bulk valence band due to the p-type Sn vacancy as the dominant dopant in SnTe [32][33][34]. It is therefore difficult to access the Dirac point of the topological surface states of SnTe in the ARPES measurement [15,16,18,20].…”