Electrical and XPS studies of 100 MeV Si7+ ion irradiated Pd/n-GaAs devices

Sinha, O. P.; Shripathi, T.; Lalla, N. P.; Srivastava, Prabhat Kumar

doi:10.1016/j.apsusc.2004.02.039

Cited by 6 publications

(4 citation statements)

References 27 publications

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“…Such decrease in conductivity after swift heavy ion irradiation is also earlier observed by our group [41]. The decrease in current value with temperature shows the semiconducting nature of the structures.…”

Section: Electronic Transport (I-v) Studysupporting

confidence: 71%

“…looks from p-type to n-type) behaviour of the respective silicon substrate. Such conductivity type change has also been observed earlier in the irradiated metal/silicon and detector diodes [41,42]. The phenomenon has been understood due to the role Effect of magnetic field on the electronic transport (I-V) study across unirradiated and irradiated Fe/ NiO/pSi interfacial structures…”

Section: Electronic Transport (I-v) Studymentioning

confidence: 92%

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Heavy ion induced modifications on morphological, magnetic and magneto-transport behaviour of exchange-biased Fe/NiO and NiO/Fe bilayers with Si substrate for spintronic applications

Srivastava

2015

J Mater Sci

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Exchange-coupled interfacial structures of Fe/ NiO and NiO/Fe with pSi substrate have been studied and also the effect of swift heavy ion irradiation on the morphological, structural, transport and magnetic behaviour is reported. The interfacial structures have been characterised from X-ray diffraction (XRD), magnetic force microscopy/ atomic force microscopy, X-ray photoelectron spectroscopy and magnetisation characteristics. XRD and X-ray photoelectron spectroscopy studies have shown the formation of various silicide and oxide phases due to the interfacial intermixing across the interfaces which is found to affect the transport and magnetic behaviour. A significant enhancement in exchange bias field and coercivity has been observed for Fe/NiO/pSi interfacial structure on the irradiation (as compared to unirradiated ones). The observed enhanced exchange bias and coercivity on the irradiation has been understood due to creation of uncompensated surface/pinned interfacial spins. Magnetic field-induced enhanced current has been observed at low temperatures (50-250 K) for the irradiated structure suggesting the spin-mixing effect. Low temperature magnetotransport study across the irradiated interface has shown negative magnetoresistance (MR) as compared to unirradiated ones for which positive MR is observed. The observed change in MR at low temperatures has been understood in terms of diffuse scattering at grain boundaries/spin-disorder scattering and/or magnetic polarons. Role of interfacial modification/changes in chemical environment across the interfaces is invoked for the observed changes in magnetic and transport behaviour of the structures. A possible explanation for the observed changes is given.

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Section: Electronic Transport (I-v) Studysupporting

confidence: 71%

Section: Electronic Transport (I-v) Studymentioning

confidence: 92%

Heavy ion induced modifications on morphological, magnetic and magneto-transport behaviour of exchange-biased Fe/NiO and NiO/Fe bilayers with Si substrate for spintronic applications

Srivastava

2015

J Mater Sci

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“…On the other hand, 80 MeV O 6þ ion irradiation improves the diode characteristics due to annealing effect [21]. The 100 MeV Si 7þ ion on Pd/n-GaAs can change the conductivity of GaAs from n-to p-type due to the irradiation induced As vacancies towards which the dopant silicon atoms migrate from Ga site [22]. However, studies of carbon ion irradiation on SBDs are scarce in literature.…”

Section: Introductionmentioning

confidence: 97%

Swift heavy ion induced capacitance and dielectric properties of Ni/n-GaAs Schottky diode

Bobby

Shiwakoti

Sarun

et al. 2015

Current Applied Physics

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“…Nanostructured materials especially IV-VI semiconductors have become a subject of intensive research for their extraordinary size dependent electrical and optical properties such as increase in band gap with declining size which make them attractive from the viewpoint of integrated photonic devices [1]. Blue shift of the optical absorption, size dependent luminescence, exceptional third order non-linear effect [2] and sufficiently large Bohr radius 18 nm are some examples of the interesting properties exhibited by PbS nanocrystallite.…”

Section: Introductionmentioning

confidence: 99%

Chemical Bath Deposition of Lead Sulphide (PbS) Thin Film and their Characterization

Bhatt

Deshpande

Soni

et al. 2013

SSP

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Thin film deposition of PbS is conveniently carried out by chemical reactions of lead acetate with thiourea at room temperature. Energy dispersive analysis of X-ray (EDAX), X-ray diffraction (XRD), selected area electron diffraction patterns (SAED), UV-Vis-NIR spectrophotometer, Scanning Electron Microscopy (SEM), Atomic force microscopy (AFM), Photoluminescence (PL) and Raman spectroscopy techniques are used for characterizing thin films. EDAX spectra shows that no impurity is present and XRD pattern indicates face centered cubic structure of PbS thin films. The average crystallite size obtained using XRD is about 15nm calculated using Scherrer’s formula and that determined from Hall-Williamson plot was found to be 18nm. SAED patterns indicate that the deposited PbS thin films are polycrystalline in nature. Blue shift due to quantum confinement was seen from the UV-Vis-NIR absorption spectra of thin film in comparison with bulk PbS. The Photoluminescence spectra obtained for thin film with different excitation sources shows sharp emission peaks at 395nm and its intensity of photoluminescence increases with increasing the excitation wavelength. Raman spectroscopy of deposited thin film was used to study the optical phonon modes at an excitation wavelength of 488nm using (Ar+) laser beam.

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Electrical and XPS studies of 100 MeV Si7+ ion irradiated Pd/n-GaAs devices

Cited by 6 publications

References 27 publications

Heavy ion induced modifications on morphological, magnetic and magneto-transport behaviour of exchange-biased Fe/NiO and NiO/Fe bilayers with Si substrate for spintronic applications

Heavy ion induced modifications on morphological, magnetic and magneto-transport behaviour of exchange-biased Fe/NiO and NiO/Fe bilayers with Si substrate for spintronic applications

Swift heavy ion induced capacitance and dielectric properties of Ni/n-GaAs Schottky diode

Chemical Bath Deposition of Lead Sulphide (PbS) Thin Film and their Characterization

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