Electrical behavior of p-type PbS-based metal-oxide-semiconductor thin film transistors

Morales-Fernández, I.E.; Medina-Montes, M. I.; González, L.; Gnade, Bruce E.; Quevedo‐Lopez, Manuel; Ramı́rez-Bon, R.

doi:10.1016/j.tsf.2010.08.092

Cited by 29 publications

(13 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Moreover, the carrier mobility and concentration of the films are found as 8.486 × 10 −1 m 2 V −1 s −1 and 1.976 18 m −3 , respectively. The mobility of the films is also higher than the previous data [10,20].…”

Section: B-217contrasting

confidence: 69%

Preparation and Characterization of Nanocrystalline PbS Thin Films Produced by Chemical Bath Deposition

2015

View full text Add to dashboard Cite

Lead sulfide thin films are deposited on glass substrates at room temperature for 2 h by chemical bath deposition. The structure, surface morphology, optical and electrical properties of the thin films are characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, optical absorption spectroscopy and the Hall effect measurements. The obtained films show the formation of well crystallized PbS with a cubic rock salt structure and with the preferential orientation (111) plane. The lattice parameter and crystallite size of the films are found as a = 600 Å and 62 nm from the X-ray reflectivity data from the atomic force microscopy image, respectively. The band gap width of the films is determined as 2.84 eV. The optical parameters of the films such as refractive index, extinction coefficient, real and imaginary parts of dielectric constant are evaluated. Moreover, from the Hall measurements, electrical resistivity, conductivity carrier mobility, and carrier concentration of the films are determined as 3.722 Ω m, 0.

show abstract

Section: B-217contrasting

confidence: 69%

Preparation and Characterization of Nanocrystalline PbS Thin Films Produced by Chemical Bath Deposition

2015

View full text Add to dashboard Cite

show abstract

“…511 P-type PbS TFTs have been prepared chemically, with low mobility in asdeposited devices but improvement after thermal annealing. 512,513 We note that channel layers are not limited to wide band gap semiconductors. TFTs using narrower band gap (<2 eV) semiconductors as channel layers have been reported, for example, CuInTe 2 .…”

Section: Solar Cellsmentioning

confidence: 99%

Wide Band Gap Chalcogenide Semiconductors

et al. 2020

View full text Add to dashboard Cite

Wide band gap semiconductors are essential for today's electronic devices and energy applications due to their high optical transparency, as well as controllable carrier concentration and electrical conductivity. There are many categories of materials that can be defined as wide band gap semiconductors. The most intensively investigated are transparent conductive oxides (TCOs) such as tin-doped indium oxide (ITO) and amorphous In-Ga-Zn-O (IGZO) used in displays, carbides (e.g. SiC) and nitrides (e.g. GaN) used in power electronics, as well as emerging halides (e.g. g-CuI) and 2D electronic materials (e.g. graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap semiconductors are less heavily investigated but stand out due to their propensity for ptype doping, high mobilities, high valence band positions (i.e. low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent conductors, as well as the theoretical and experimental underpinnings of the corresponding research methods. We proceed to summarize progress in wide band gap (E G > 2 eV) chalcogenide materials, such as II-VI MCh binaries, CuMCh 2 chalcopyrites, Cu 3 MCh 4 sulvanites, mixed anion layered CuMCh(O,F), and 2D materials, among others, and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. We finally review applications of chalcogenide wide band gap semiconductors, e.g. photovoltaic and photoelectrochemical solar cells, transparent transistors, and light emitting diodes, that employ wide band gap chalcogenides as either an active or passive layer. By examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this review aims to inspire continued research on this emerging class of transparent conductors and to enable future innovations for optoelectronic devices.

show abstract

“…The hole mobility increases for all the devices but more significantly for ‘pure’ PbS/TBAI FETs. This effect could be explained in terms of the variation of the grain size due to the thermal annealing .…”

Section: Resultsmentioning

confidence: 99%

Influence of ligand exchange on the electrical transport properties of PbS nanocrystals

Borriello

Miscioscia

Mansour

et al. 2015

Physica Status Solidi (a)

View full text Add to dashboard Cite

In this work, FETs are used as a research tool to study charge carrier mobilities in PbS nanocrystals (NCs) thin‐films employed as semiconducting layer in bottom‐gate bottom‐contact (BGBC) field‐effect transistors (FETs). The as‐synthesised NCs are surrounded by long alkyl chain ligands which act as electrical insulators. Therefore, a ligand exchange process with shorter molecules is necessary to enhance the free charges generation and transport. We used two different ligands: 1,2 ethandithiol (EDT) and 1,2,3,4‐tetrabutylammonium iodide (TBAI) and studied the charge mobility of PbS NCs comparing the electrical characteristics of FETs made by exchanged NCs. We analysed also the contemporary presence of both exchanged nanocrystals on the device. All the transistors showed p‐type transport behaviour, enhanced by an annealing process at 100 °C for 10 min. After this, only the TBAI‐treated NCs devices showed a n‐type transport, resulting in an ambipolar behaviour. Inkjet printing deposition techniques was also successfully used to deposit PbS‐(TBAI) NCs and ambipolar devices were obtained. In addition, for printed devices it was found that it is possible to modulate the charge transport properties by applying surface treatment to the substrate with a pentafluorothiophenol (PFTP). Indeed in this case, the p‐type transport was suppressed while n‐type behaviour was induced.

show abstract

Electrical behavior of p-type PbS-based metal-oxide-semiconductor thin film transistors

Cited by 29 publications

References 29 publications

Preparation and Characterization of Nanocrystalline PbS Thin Films Produced by Chemical Bath Deposition

Preparation and Characterization of Nanocrystalline PbS Thin Films Produced by Chemical Bath Deposition

Wide Band Gap Chalcogenide Semiconductors

Influence of ligand exchange on the electrical transport properties of PbS nanocrystals

Contact Info

Product

Resources

About