Electrical Behavior of Phase-Change Memory Cells Based on GeTe

Perniola, L.; Sousa, V.; Fantini, A.; Arbaoui, Edrisse; Bastard, A.; Armand, M.; Fargeix, A.; Jahan, C.; Nodin, J. F.; Persico, A.; Blachier, D.; Toffoli, A.; Loubriat, S.; Gourvest, E.; Beneventi, Giovanni Betti; Feldis, H.; Maîtrejean, S.; Lhostis, S.; Roule, A.; Cueto, O.; Reimbold, G.; Poupinet, Ludovic; Billon, T.; Salvo, B. De; Bensahel, D.; Mazoyer, P.; Annunziata, R.; Zuliani, P.; Boulanger, F.

doi:10.1109/led.2010.2044136

Cited by 133 publications

(61 citation statements)

References 8 publications

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“…1. While the ratio of high to low resistance states (R H /R L ) in STT-MRAM is less than 4 [7], this is as high as 10 4 in PCMs [8]. This eliminates the need for an inverter or a buffer at the output of the voltage divider and as a result, reduces the short-circuit power through path 2 (Fig.…”

Section: Applicability Of Nvms In Fpgasmentioning

confidence: 99%

Emerging Non-Volatile Memory technologies for future low power reconfigurable systems

Ahari

Asadi

Tahoori

2014

2014 9th International Symposium on Reconfigurable and Communication-Centric Systems-on-Chip (ReCoSoC)

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Non-Volatile Memory (NVM) technologies are promising alternatives to traditional CMOS memory technologies. While NVMs were primarily studied to be used in the memory hierarchy, they can also provide benefits in reconfigurable systems such as Field-Programmable Gate Arrays (FPGAs). In this paper, we investigate the applicability of different NVM technologies for the configuration bits of FPGAs and propose a power-efficient reconfigurable architecture based on Phase Change Memory (PCM). Quantitative analysis for various FPGA architectures using different memory technologies shows the benefits of the proposed scheme.

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Section: Applicability Of Nvms In Fpgasmentioning

confidence: 99%

Emerging Non-Volatile Memory technologies for future low power reconfigurable systems

Ahari

Asadi

Tahoori

2014

2014 9th International Symposium on Reconfigurable and Communication-Centric Systems-on-Chip (ReCoSoC)

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“…Ternary alloy Ge 2 Sb 2 Te 5 (GST) is the most popular compound for PCM applications, but there are some issues limiting its development. For example, its 10-year data retention temperature (∼89 • C) cannot quite meet the demand for the automobile electronics [5,6]. The crystallization speed of GST (50 ns) is not enough for the high speed PCM application [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Study on WSb 3 Te material for phase-change memory applications

Meng

Zhou

Han

et al. 2015

Applied Surface Science

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“…1b • C). 21,22 It indicates that the increasement of Se content can significantly improve the archival life of the amorphous Sb-Te-Se films. Fig.…”

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confidence: 98%

Tunable Phase-Change Performance of Sb-Te-Se Film for Phase Change Memory

et al. 2015

ECS J. Solid State Sci. Technol.

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In this paper, the phase change characteristics of Sb-Te-Se films were systematically studied by in-situ resistance-temperature measurement, X-ray diffraction (XRD), Raman scattering spectroscopy, X-ray photoelectron spectra (XPS), and Transmission electron microscopy (TEM). For preferred Sb56Te24Se20 and Sb55Te22Se23 films, the temperature for 10-year data retention can be up to 93.1 and 102.6°C, which are higher than that of Ge2Sb2Te5 (GST, 82°C). Both amorphous and crystalline resistivities increase with Se content. The resistance ratios between two states maintain almost 4 orders of magnitude. The microstructure of annealed Sb-Te-Se films exhibits uniform distribution of crystallized phases with rhombohedra Sb2SeTe2 and hexagonal Sb. The improvement in thermal stability of Sb-Te-Se films results from the atomic arrangements and consequently the complex cross bond system.

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Electrical Behavior of Phase-Change Memory Cells Based on GeTe

Cited by 133 publications

References 8 publications

Emerging Non-Volatile Memory technologies for future low power reconfigurable systems

Emerging Non-Volatile Memory technologies for future low power reconfigurable systems

Study on WSb 3 Te material for phase-change memory applications

Tunable Phase-Change Performance of Sb-Te-Se Film for Phase Change Memory

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