Electrical behavior of n‐GaAs based Schottky diode for different contacts: Temperature dependence of current‐voltage

Abstract

We report on the electrical behavior of Metal/n‐GaAs Schottky structure, using Silvaco‐Atlas software. To study the effect of metal work function ϕm on the performance of various parameters such as saturation current Is, ideality factor n, and barrier height ϕb, we examine a large number of contact materials having different ϕm at room temperature (300 K). The results show a significant dependence between ϕm and the electrical parameters. It is observed that the smaller values of the threshold voltage Vi are obtained for low ϕm. We also find that metals within ϕm ∈ [4.42–5.31] eV give lower n. A linear increase of the barrier height ϕb is mentioned for ϕm ∈ [4.33–5.37] which is in accordance with the theoretical relationship. In addition, the selection of four different metal contact (Cu, Au, Pt, and Ni) is devoted to simulate the Metal/n‐GaAs Schottky structure in a wide temperature range of (100–400 K). This allows us to extract and discuss the influence of temperature on the performance of our proposed device.

Modeling the Abnormal Behavior of the 6H-SiC Schottky Diode Using Lambert W Function

“…As indicated in Table 2, the values of n, bn, and Is (A) for the diode modeled with one barrier (bn  0.82 eV, n  1.18) were significantly different from those modeled with two barriers (Region 1: bn  0.92 eV, n  1.93 and Region 2: bn  1.56 eV, n  1.23), the double-barrier diode has a high ideality factor and the barrier height presenting Schottky barrier inhomogeneity of the diode due to trap centers (defect centers) that generate tunnel currents (thermionic field emission TFE and field emission FE) [14][15][16][17][18]. Furthermore, it is clear that the double-barrier diode has greater reverse leakage currents than the near-ideal diode.…”

A highly stable temperature sensor based on Au/Cu/n-Si Schottky barrier diodes dependent on the inner metal thickness

“…Furthermore, as mentioned above, SBH Φ b0 values of 0.61, 0.66 and 0.69 eV were obtained for SBDs D2, D3 and D4, respectively, at 300 K. The SBH is the most important quantity of a MS rectifying contact since it manages the flow of carriers across the MS interface and is crucial for the development of future high-functionality optoelectronics devices [35][36][37][38][39][40][41][42]. It was stated in section 2 that the Cu SC metal thickness of the SBDs D2, D3 and D4 is 100, 4 and 2 nm, respectively.…”