Electrical Behaviors of the Co‐ and Ni‐Based POMs Interlayered Schottky Photodetector Devices

Yıldırım, Murat; Koçyiğit, Adem; Torlak, Yasemin; Yenel, Esma; Hussaini, Ali Akbar; Kuş, Mahmut

doi:10.1002/admi.202102304

Cited by 9 publications

(1 citation statement)

References 80 publications

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“…I-V measurements were used to study electrical properties of the Ag/ZnO/p-Si heterostructures for various light power illumination intensity as well as changing wavelengths. I-V characteristics are employed to see voltage depending characteristics of the diodes and to calculate series or shunt resistance, barrier height and ideality factor values [27]. lnI-V graphs of the Ag/ZnO/p-Si heterostructure has been displayed in figure 2 for various light power intensities.…”

Section: Resultsmentioning

confidence: 99%

Investigation of Ag/ZnO/p-Si heterostructure for diode and photodiode applications in visible spectrum

Yıldız,

Kocyigit,

Yıldırım

2023

Phys. Scr.

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Photodiodes have gained great attention for lightning control and optical communication over the last two decades. To obtain faster and more sensitive photodiodes are important for industrial applications. In this study, atomic layer deposition (ALD) technique was used to fabricate ZnO interlayer on p-Si, and thermal evaporation technique was employed to deposit Ag rectifying and Al ohmic contacts on ZnO surface and back surface of p-Si, respectively. The UV-Vis spectrometer was used to characterize optical behaviors of the ZnO interlayer. I-V measurements were conducted to characterize of Ag/ZnO/p-Si heterostructure for various solar light power intensities of dark, 20, 40, 60, 80 and 100 mW/cm2 and at various wavelengths from 351 nm to 800 nm by 50 nm intervals. According to I-V characteristics, the device exhibited increasing current at reverse biases depending on increasing light power intensity, and this confirmed photodiode behavior. Various diode parameters such as rectifying ratio, threshold voltage, series resistance, barrier height, etc. were determined and discussed in details from forward bias characteristics to investigate diode characteristics of the Ag/ZnO/p-Si heterostructure. The photodetection parameters such as responsivity, specific detectivity and external quantum efficiency (EQE) also were investigated. The Ag/ZnO/p-Si heterostructure exhibits good detection performance at all visible range and can be good candidate for optoelectronic applications.

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Section: Resultsmentioning

confidence: 99%

Investigation of Ag/ZnO/p-Si heterostructure for diode and photodiode applications in visible spectrum

Yıldız,

Kocyigit,

Yıldırım

2023

Phys. Scr.

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Investigation of electrical properties of Al/LiCoO2/n-Si photodiode by ultrasonic spray pyrolysis method

et al. 2023

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Investigation of photosensitive and photodetector characteristics of n-TPA-IFA/p-Si heterojunction structure

Çavdar,

Oruç,

Eymur

et al. 2024

J Mater Sci: Mater Electron

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Abstractn-TPA-IFA organic material was synthesized and deposited on p-Si by spin coating method to produce n-TPA-IFA/p-Si heterojunction diode. We determined that the dielectric constant and energy band gap of TPA-IFA organic material were 3.91 and 3.37 eV by DFT/B3LYP/6-311G(d,p) method using on Gaussian 09 W, respectively, and the carrier type of TPA-IFA organic semiconductor material was also n-type at room temperature from temperature-dependent hall effect measurements. Using forward and reverse bias I–V measurements in the dark and under various light intensities, we examined the key electrical characteristics of the n-TPA-IFA/p-Si heterojunction diode, including $${\Phi }_{b}$$ Φ b and $$n$$ n . It was determined that the rectification ratio (RR) was approximately 104. The reverse current's observed increasing behavior with increasing light indicates that the produced heterojunction diode can be utilized as a photodiode, detector, or sensor. The values of n, $${\Phi }_{b}$$ Φ b , and Io were determined using I–V data in dark as 1.34, 0.91 eV, and 7.25 9 10–12 A, respectively. On the other hand, when the n-TPA-IFA/p-Si heterojunction diode is exposed to 100 mW/cm2 illumination, these parameters were obtained as 1.85, 0.80 eV, and 5.11 9 10–10 A, respectively. Photovoltaic parameters such as short circuit current (Isc) and open circuit voltage (Voc) were determined as 0.018 mV, 0.08 A and 0.050 mV, 0.29 A under 20 mW/cm2 light and 100 mW/cm2 light intensity, respectively. The photodetector properties of n-TPA-IFA/p-Si heterostructure were explored at different light intensities, and the photoresponsivity (R), photosensitivity (PS), specific detectivity ($${D}^{*}$$ D ∗ ), and linear dynamic range (LDR) of the heterojunction changed with reverse voltage and light intensity. It was found that as light intensity increased, the linear dynamic range (LDR), a crucial characteristic for image sensors, increased as well (10.15 dB and 18.84 dB for 20 and 100 mW/cm2).

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Electrical Behaviors of the Co‐ and Ni‐Based POMs Interlayered Schottky Photodetector Devices

Cited by 9 publications

References 80 publications

Investigation of Ag/ZnO/p-Si heterostructure for diode and photodiode applications in visible spectrum

Investigation of Ag/ZnO/p-Si heterostructure for diode and photodiode applications in visible spectrum

Investigation of electrical properties of Al/LiCoO2/n-Si photodiode by ultrasonic spray pyrolysis method

Investigation of photosensitive and photodetector characteristics of n-TPA-IFA/p-Si heterojunction structure

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