Electrical bistability, negative differential resistance and carrier transport in flexible organic memory device based on polymer bilayer structure

Islam, Sk Masiul; Banerji, P.; Banerjee, Soumen

doi:10.1016/j.orgel.2013.10.029

Cited by 40 publications

(24 citation statements)

References 41 publications

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“…A unique interface state between two adjacent materials seems to be responsible for the negative differential resistance (NDR) behavior of Low cost electrical bistability due to nonlinear conducting behavior has been an exciting area of research in recent years. [1][2][3][4][5][6][7][8] Several new devices such as tunnel diodes, multivibrators, and organic bistable systems have been investigated.…”

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confidence: 99%

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Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Sarswat

Smith

Free

et al. 2015

ECS J. Solid State Sci. Technol.

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The resistive switching behavior of TiO 2 based electronic devices have been extensively investigated the last two decades due to their low cost and potential applications in high speed electronic devices. However, the randomness in switching behavior and uncertainty in conducting filament formation often restricts their usage for long-term applications. A duality in current transport mechanism was observed when nano-architectural parameters of the TiO 2 memory resistance device were altered. TiO 2 nanotube-CZTS nanocrystals based devices exhibit Fowler-Nordheim quantum tunneling, whereas TiO 2 nanocrystals-CZTS thin film based devices exhibit space charge limited conduction. Temperature dependent electrical studies indicate that polaronic transport is one of the phenomena assisting in electrical conduction. Electronic band information suggests that tunneling between CZTS and TiO 2 is indirect. A unique interface state between two adjacent materials seems to be responsible for the negative differential resistance (NDR) behavior of Low cost electrical bistability due to nonlinear conducting behavior has been an exciting area of research in recent years. [1][2][3][4][5][6][7][8] Several new devices such as tunnel diodes, multivibrators, and organic bistable systems have been investigated.1-7 Some of these devices possess unique I-V characteristics and non-conventional current transport mechanisms. Devices showing negative differential resistance (NDR) can be utilized for various low power applications such as radio frequency, logic and neuromorphic devices, fast switching, and high frequency oscillators.1-7,9-11 Materials such as carbon nanotubes, graphene, and conducting polymers have been recently utilized for room temperature NDR behavior or memory resistance applications. [1][2][3][4][5][6][7]9,10,12,13 Memory resistors can be fabricated using semiconductors and metal oxides such as Nb 2 O 5 , NiO, ZnO and TiO 2 .14 Thin film memory resistors offer advantages such as high switching speed and low energy electroforming. The use of thin film TiO 2 in a memory resistor has demonstrated potential dependent on/off switching when sandwiched between two platinum contacts. 15 It is generally believed that a memoresistance effect in TiO 2 nanostructures is based on the mobility of vacancies or defects. [15][16][17] The conduction mechanism is based on the formation and transport of conducting filament (CF). A conducting filament generally consists of oxygen vacancies that form or break due to electric field driven migration. Because of randomness and uncertainty in CF's formation, resistance-switching (RS) devices often perform randomly and thus have less control over operating parameters. Another report suggests that Joule heating is also a major cause for current controlled negative resistance behavior. 18 This behavior relies on polaronic transport in TiO 2 . In polaronic transport, the hopping motion of small polarons up to certain temperatures influences conduction. Several other mechanisms and switching modes such...

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confidence: 99%

“…[1][2][3][4][5][6][7]9,10,12,13 Memory resistors can be fabricated using semiconductors and metal oxides such as Nb 2 O 5 , NiO, ZnO and TiO 2 .…”

mentioning

confidence: 99%

Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Sarswat

Smith

Free

et al. 2015

ECS J. Solid State Sci. Technol.

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“…[73][74][75][76][77][78] Especially, to improve the memory properties such as ON/ OFF ratio and power consumption, hybrid-type devices which incorporate the nanoparticles in the polymer matrix have been investigated extensively. [73][74][75][76][77][78] Especially, to improve the memory properties such as ON/ OFF ratio and power consumption, hybrid-type devices which incorporate the nanoparticles in the polymer matrix have been investigated extensively.…”

Section: Organic-inorganic Hybrid Polymer and Organic Small Molecule-mentioning

confidence: 99%

Recent Advances in Memory Devices with Hybrid Materials

Hwang

Lee

2018

Adv Elect Materials

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Increasing demands for information‐storage capacity and for miniaturization of memory cells have driven exploration of new‐generation data storage devices, because the conventional Si‐based memory technology is approaching its fundamental physical limits. Hybrid materials and novel device structure may lead to a paradigm shift toward memory devices that have high density, multifunctionality, and low power consumption. Here, the structure and operation mechanism of resistive switching memory devices are described, then recent advances in hybrid materials (e.g., graphene‐based polymer composites, organic–inorganic hybrid perovskite materials) for fabrication of these devices are summarized. How to increase the ON/OFF ratio and the density of memories, and to decrease programming voltage by selecting appropriate active materials, and engineering the active layers, are also demonstrated. Finally, the current challenges and future directions in memory devices based on hybrid materials are summarized.

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“…High performance flexible OMDs, including organic resistors [195][196][197][198][199][200], OFET memories [16,39,[201][202][203][204][205][206][207][208] and other complex-structured memories [209,210], are vastly investigated concerning high switching speed, high on/off ratios, long retention time, and even multi-level states or multi-functionalities [211]. They show tremendous applications in sensor arrays [212][213][214], braille displays [39], integrated circuits [215] and RFIDs [48].…”

Section: Ultraflexible Organic Memory Devicesmentioning

confidence: 99%

Thin-film organic semiconductor devices: from flexibility to ultraflexibility

Qian

Zhang

et al. 2016

Sci. China Mater.

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Flexible thin-film organic semiconductor devices have received wide attention due to favorable properties such as light-weight, flexibility, reproducible semiconductor resources, easy tuning of functional properties via molecular tailoring, and low cost large-area solution-procession. Among them, ultraflexible electronics, usually with minimum bending radius of less than 1 mm, are essential for the development of epidermal and bio-implanted electronics, wearable electronics, collapsible and portable electronics, three dimensional (3D) surface compliable electronics, and bionics. This review firstly gives a brief introduction of development from flexible to ultraflexible organic semiconductor electronics, and design of ultraflexible devices, then summarizes the recent advances in ultraflexible thin-film organic semiconductor devices, focusing on organic field effect transistors, organic light-emitting diodes, organic solar cells and organic memory devices.

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Electrical bistability, negative differential resistance and carrier transport in flexible organic memory device based on polymer bilayer structure

Cited by 40 publications

References 41 publications

Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Recent Advances in Memory Devices with Hybrid Materials

Thin-film organic semiconductor devices: from flexibility to ultraflexibility

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Electrical bistability, negative differential resistance and carrier transport in flexible organic memory device based on polymer bilayer structure

Cited by 40 publications

References 41 publications

Duality in Resistance Switching Behavior of TiO2-Cu2ZnSnS4Device

Duality in Resistance Switching Behavior of TiO2-Cu2ZnSnS4Device

Recent Advances in Memory Devices with Hybrid Materials

Thin-film organic semiconductor devices: from flexibility to ultraflexibility

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Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device