2018 IEEE Conference on Electrical Insulation and Dielectric Phenomena (CEIDP) 2018
DOI: 10.1109/ceidp.2018.8544815
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Electrical Breakdown Characteristics of Epoxy/Hollow Silica Composite Materials

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Cited by 2 publications
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“…The results for EP/h‐SiO 2 ‐10 samples presented in Figure were indicative of existence of hollow regions, voids at the interface between hollow silica and EP or other sites as partial discharge origins. On the other hand, one can conclude that partial discharges determining dielectric breakdown do not occur in hollow silica regions in EP/h‐SiO 2 ‐10 samples under the experimental conditions considering that PD characteristics remain same irrespective of the presence or absence of hollow silica regions as shown in Figures and , that AC 0p ‐BDV values are nearly same as AC 0p ‐BDV (AC 0p ‐Fb) in Figure , and that measured PDIV in samples with a single hollow particles and voltage borne by the hollow region (estimated by electric field analysis) are much higher that Paschen voltage at 1 atm . This is suggestive of a breakdown process in which microvoids and other defects at the EP/SiO 2 interface work as an electrical weak point.…”
Section: Resultsmentioning
confidence: 77%
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“…The results for EP/h‐SiO 2 ‐10 samples presented in Figure were indicative of existence of hollow regions, voids at the interface between hollow silica and EP or other sites as partial discharge origins. On the other hand, one can conclude that partial discharges determining dielectric breakdown do not occur in hollow silica regions in EP/h‐SiO 2 ‐10 samples under the experimental conditions considering that PD characteristics remain same irrespective of the presence or absence of hollow silica regions as shown in Figures and , that AC 0p ‐BDV values are nearly same as AC 0p ‐BDV (AC 0p ‐Fb) in Figure , and that measured PDIV in samples with a single hollow particles and voltage borne by the hollow region (estimated by electric field analysis) are much higher that Paschen voltage at 1 atm . This is suggestive of a breakdown process in which microvoids and other defects at the EP/SiO 2 interface work as an electrical weak point.…”
Section: Resultsmentioning
confidence: 77%
“…On the other hand, one can conclude that partial discharges Figure 8, and that measured PDIV in samples with a single hollow particles and voltage borne by the hollow region (estimated by electric field analysis) are much higher that Paschen voltage at 1 atm. 13 This is suggestive of a breakdown process in which microvoids and other defects at the EP/SiO 2 interface work as an electrical weak point.…”
Section: Dielectric Breakdown Testsmentioning
confidence: 99%