Electrical Breakdown in Solids

Klein, N.

doi:10.1016/s0065-2539(08)60985-3

Cited by 96 publications

(30 citation statements)

References 138 publications

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“…This is justified by observations with a scanning microscope as well as by observations mentioned in the literature. 13 In this case, the reSistance of the structure is connected to the channel volume by the relation:…”

Section: Interpretation and Discussionmentioning

confidence: 99%

Switching in polystyrene films: Transition from on to off state

Ségui

Carchano

1976

Journal of Applied Physics

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Experiments on polystyrene films formed by a glow-discharge technique shows a reproducible bistable switching. Various interpretations are briefly reviewed. It is shown that the resistance of the on state is strictly related to the energy needed by the on-off transition. From the value of this energy it is concluded that the most probable explanation is that the on current takes place along a filamentary path constituted by carbon atoms. A quantitative analysis is made on the basis of the heat balance equation. Formation of carbonated chains is confirmed by a chromatography analysis in vapor phase which shows an hydrogen release.

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Section: Interpretation and Discussionmentioning

confidence: 99%

Switching in polystyrene films: Transition from on to off state

Ségui

Carchano

1976

Journal of Applied Physics

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“…The main breakdown processes in dielectric layers are the thermal and electric breakdowns, which are competing processes. 21 In general, the process resulting in the lower breakdown voltage dominates, resulting in dielectric breakdown. essentially similar for all devices at the higher temperatures, and seemed to become almost independent of temperature above 340 K. We have extracted the activation energy, E a , for thermal breakdown of an oxide layer from its Arrheniuslike plot of ln[V B ] versus 1000/T for 180 K Ä T Ä 320 K. The variation of activation energy with annealing time is shown in Fig.…”

Section: Illustrated Inmentioning

confidence: 99%

Effect of rapid thermal annealing on the electrical properties of ion‐beam‐synthesized oxide layers using 12 keV O₂⁺ bombardment of Si

Deenapanray¹

2001

Surface & Interface Analysis

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• incidence in a SIMS instrument. The oxide layers were annealed at 950• C for 3, 6 or 8.5 min under Ar flow in a rapid thermal annealer. Temperature-dependent current-voltage (I -V -T) measurements were used in order to establish both the dielectric quality and the current transport mechanisms across the dielectric layers. Annealing for 8.5 min doubled the breakdown voltage while decreasing the leakage current by a factor of ∼18. The ohmic quality of the layers for the low field strengths decreased with the increasing annealing time, which is related to the removal of implantation damage as observed by high-resolution RBS measurements. For the high field strengths, the tunnelling effect was most dominant for the oxide annealed for 8. INTRODUCTIONThe ion beam oxidation of Si using low-energy oxygen ions constitutes an area of both technological and basic scientific interest. Ion beam synthesis of SiO 2 layers has been employed successfully for the fabrication of semiconductoron-insulator (SOI) structures. Ultra-large-scale integration poses stringent demands on the production of SIMOX (separation by implanted oxygen structures) layers with high-quality thin Si overlayers that can be used for further epitaxial growth. One way to achieve this is through the implantation of low-energy (¾20 keV) oxygen ions followed by high-temperature annealing.1,2 It is, however, well known that the use of ion implantation in the formation of SIMOX SOI creates damage in the Si lattice, which is stable even after annealing. 3,4 Low-energy oxygen ions (¾0.1-20 keV) also are employed in SIMS to determine the depth distribution of impurities in semiconductors. The formation of a stoichiometric surface oxide layer may cause the redistribution of the impurity species being profiled, and hence degrade the depth resolution. We have studied recently the segregation Ł Correspondence to: P. N. K. Deenapanray, Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra ACT 0200, Australia. E-mail: pnk109@rsphysse.anu.edu.au Contract/grant sponsor: Professor C. Jagadish. behaviour of several ion-implanted impurities in both n-and p-type Si wafers of different resistivities.5 -7 The anomalous redistribution of impurities during the formation of an SiO 2 layer can, amongst others, be explained by the thermodynamically driven and electric-field-driven segregation effects. -7The formation of a shallow buried SiO 2 layer during low-energy oxygen ion implantation involves several, often competing, processes such as the simultaneous implantation of oxygen ions below the Si surface and the sputter removal of the top surface layer, determined primarily by the ion energy and angle of incidence. 8 -10 In brief, the implanted oxygen ions build up to a threshold level when a buried SiO 2 layer is formed. Oxygen in excess of this threshold level rapidly diffuses out of the SiO 2 layer to react with free Si at the Si/SiO 2 interfaces. Simultaneous sputtering of the Si sur...

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“…The inert metal electrode was of platinum or palladium, with the thickness of the electrode layer being approximately 7 (7), the value of the thermal conductivity will be assumed to be constant.…”

Section: Design Features Of the Capacitorsmentioning

confidence: 99%

An evaluation of the voltage-current rating characteristics of miniature monolithic RF ceramic capacitors

1980

Microelectronics Journal

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This paper reviews the establishment of RF voltage and current rating characteristics of monolithic ceramic capacitors, using thermal balance considerations between heating of the component due to dielectric losses and heat transport through conduction by the electrodes.Maximum thermal voltages and currents, characteristic of the electric and thermal conductivities of the dielectric material, were calculated on the basis of dielectric loss-frequency characteristics determined experimentally for test devices resembling in their design those of miniature RF power capacitors, and UHF/microwave porcelain chip capacitors for applications in strip line circuits.Maximum rated RF voltages for the specific components were evaluated by consideration of the elements of dielectric strength and breakdown properties.By the establishment of the maximum internal temperatures developed within the dielectric upon the application of RF voltages which are permissible for reliable operation of the component, the RF voltage and current rating characteristics may be designated in terms of characteristic limiting impedances determining regions of the characteristics where limitations by the maximum rated voltage, power, or current obtain.Relations between rating characteristics and component design are briefly reviewed.

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Electrical Breakdown in Solids

Cited by 96 publications

References 138 publications

Switching in polystyrene films: Transition from on to off state

Switching in polystyrene films: Transition from on to off state

Effect of rapid thermal annealing on the electrical properties of ion‐beam‐synthesized oxide layers using 12 keV O₂⁺ bombardment of Si

An evaluation of the voltage-current rating characteristics of miniature monolithic RF ceramic capacitors

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Electrical Breakdown in Solids

Cited by 96 publications

References 138 publications

Switching in polystyrene films: Transition from on to off state

Switching in polystyrene films: Transition from on to off state

Effect of rapid thermal annealing on the electrical properties of ion‐beam‐synthesized oxide layers using 12 keV O2+ bombardment of Si

An evaluation of the voltage-current rating characteristics of miniature monolithic RF ceramic capacitors

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Effect of rapid thermal annealing on the electrical properties of ion‐beam‐synthesized oxide layers using 12 keV O₂⁺ bombardment of Si